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Electronic states and shape of silicon quantum dots |
| Huang Wei-Qi (黄伟其), Miao Xing-Jian (苗信建), Huang Zhong-Mei (黄忠梅), Cheng Han-Qiong (陈汉琼), Shu Qin (苏琴) |
| Institute of Nanophotonic Physics, Key Laboratory of Photoelectron Technology and Application, Guizhou University, Guiyang 550025, China |
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Abstract A curviform surface breaks the symmetrical shape of silicon quantum dots on which some bonds can produce localized electronic states in the bandgap. The calculation results show that the bonding energy and electronic states of silicon quantum dots are different on various curved surfaces, for example, a Si-O-Si bridge bond on curved surface provides localized levels in bandgap and its bonding energy is shallower than that on the facet. The red-shifting ofthe photoluminescence spectrum on smaller silicon quantum dots can be explained by the curved surface effect. Experiments demonstrate that silicon quantum dots are activated for emission due to the localized levels provided by the curved surface effect.
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Received: 14 August 2012
Revised: 10 October 2012
Accepted manuscript online:
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PACS:
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42.55.-f
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(Lasers)
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68.65.Hb
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(Quantum dots (patterned in quantum wells))
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78.45.+h
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(Stimulated emission)
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78.55.Mb
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(Porous materials)
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| Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 60966002 and 11264007) and the National Key Laboratory of Surface Physics in Fudan University, China. |
Corresponding Authors:
Huang Wei-Qi
E-mail: WQHuang2001@yahoo.com
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Cite this article:
Huang Wei-Qi (黄伟其), Miao Xing-Jian (苗信建), Huang Zhong-Mei (黄忠梅), Cheng Han-Qiong (陈汉琼), Shu Qin (苏琴) Electronic states and shape of silicon quantum dots 2013 Chin. Phys. B 22 064207
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