Finite size effect on Raman frequency of phonons in nano-semiconductors

doi:10.1088/1674-1056/21/9/097801

Abstract A comprehensive study on Raman spectroscopy with different excitation wavelengths, sample sizes, and sample shapes for optic phonons (OPs) and acoustic phonons (APs) in polar and non-polar nano-semiconductors has been performed. The study affirms that the finite size effect does not appear in the OPs of polar nano-semiconductors, while it exists in all other types of phonons. The absence of the FSE is confirmed to be originated from the long-range Fröhlich interaction and the breaking of translation symmetry. The result indicates that the Raman spectra of OPs cannot be used as a method to characterize the scale and crystalline property of polar nano-semiconductors.

Keywords: Raman spectral finite size effect nano-semiconductor

Received: 31 March 2012
Revised: 15 May 2012
Accepted manuscript online:

PACS:

78.30.Am

(Elemental semiconductors and insulators)

Fund: Project supported by the National Basic Research Program of China (Grants Nos. 2009CB929403 and 2012CB825700) and the National Natural Science Foundation of China (Grants Nos. 10774006 and 60876002).

Corresponding Authors: Zhang Shu-Lin
E-mail: slzhang@pku.edu.cn

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Xia Lei (夏磊), Zhong Kai (钟凯), Song Yang (宋阳), Lu Xin (陆欣), Xu Lü-Shun (许旅顺), Yan Yan (阎研), Li Hong-Dong (李红东), Yuan Fang-Li (袁方利), Jiang Jian-Zhong (蒋建中), Yu Da-Peng (俞大鹏), Zhang Shu-Lin (张树霖) Finite size effect on Raman frequency of phonons in nano-semiconductors 2012 Chin. Phys. B 21 097801

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