Preparing Cu2ZnSnS4 films using the co-electro-deposition method with ionic liquids

doi:10.1088/1674-1056/21/5/058801

Abstract Cu₂ZnSnS₄ (CZTS) films are successfully prepared by co-electrodeposition in aqueous ionic solution and sulfurized in elemental sulfur vapor ambient at 400℃ for 30 min using nitrogen as the protective gas. It is found that the CZTS film synthesized at Cu/(Zn+Sn)=0.71 has a kesterite structure, a bandgap of about 1.51 eV, and an absorption coefficient of the order of 10⁴ cm^-1. This indicates that the co-electrodeposition method with aqueous ionic solution is a viable process for the growth of CZTS films for application in photovoltaic devices.

Keywords: sulfurization Cu₂ZnSnS₄ co-electrodeposition

Received: 23 June 2011
Revised: 27 April 2012
Accepted manuscript online:

PACS:	88.40.jn	(Thin film Cu-based I-III-VI2 solar cells)
	88.40.-j	(Solar energy)
	81.15.Cd	(Deposition by sputtering)

Fund: Project supported by the National Key Basic Research Program of China (Grant No. 2011CBA00706), the National Natural Science Foundation of China (Grant No. 51007082), and the Basis and Frontier Technology Research Plan Projects of Henan Province, China (Grant No. 102300410075).

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Chen Yong-Sheng(陈永生), Wang Ying-Jun(王英君), Li Rui(李瑞), Gu Jin-Hua(谷锦华), Lu Jing-Xiao(卢景霄), and Yang Shi-E(杨仕娥) Preparing Cu₂ZnSnS₄ films using the co-electro-deposition method with ionic liquids 2012 Chin. Phys. B 21 058801

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Preparing Cu2ZnSnS4 films using the co-electro-deposition method with ionic liquids

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Preparing Cu₂ZnSnS₄ films using the co-electro-deposition method with ionic liquids