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Chin. Phys. B, 2011, Vol. 20(1): 017802    DOI: 10.1088/1674-1056/20/1/017802
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

An investigation on the magneto-optic properties of terbium gallium garnet under high magnetic field

Yang Guo(杨国)a), Zhang Guo-Ying(张国营) a)†, Gao Jiao(高娇)a), Xue Liu-Ping(薛刘萍)a), Xia Tian(夏天)b), and Zhang Xue-Long(张学龙)b)
a Department of Physics, College of Science, China University of Mining and Technology, Xuzhou 221008, China; b College of Medical Mechanism, Shanghai University of Science and Technology, Shanghai 200093, China
Abstract  The superexchange interaction on a magnetic ion may be represented by an effective field Hm = $\lambda$M in some paramagnetic materials, here λ is the coefficient of effective field and M = $\chi$He with $\chi$ being the magnetic susceptibility and He being the applied field. The variation of the equivalent $\lambda_{\chi}$ with the dynamic applied field is given and the crystal field-splitting levels of the excited configuration 4f75d1 of the Tb3+ ion are calculated in the Tb3Ga5O12. By means of the effective field Hm and the applied field He, the Faraday rotation of Tb3Ga5O12 at 6 K and 41 K, under the high magnetic field and at 0.63 μm wavelength, are presented. Our calculated results are in agreement with the experimental data.
Keywords:  terbium gallium garnet      high applied field      superexchange interaction      magneto-optical properties  
Received:  19 January 2010      Revised:  09 April 2010      Accepted manuscript online: 
PACS:  78.20.Ls (Magneto-optical effects)  
Fund: Project supported by the Fundamental Research Funds for the Central Universities (Grant No. 2010LKWL07) and the National Basic Research Program of China (Grant No. 2010CB226805).

Cite this article: 

Yang Guo(杨国), Zhang Guo-Ying(张国营), Gao Jiao(高娇), Xue Liu-Ping(薛刘萍), Xia Tian(夏天), and Zhang Xue-Long(张学龙) An investigation on the magneto-optic properties of terbium gallium garnet under high magnetic field 2011 Chin. Phys. B 20 017802

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