Thermal stability of HfO2/Si (001) films prepared by electron beam evaporation in ultrahigh vacuum using atomic oxygen

doi:10.1088/1674-1056/19/12/128204

Abstract HfO₂ films on silicon substrates have been prepared by electron beam evaporation in ultrahigh vacuum using atomic oxygen. Synchrotron radiation photon–electron spectroscopy was used to investigate the thermal stability of HfO₂ films under an ultrahigh vacuum environment. At the temperature of 750 $^\circ$C, HfO₂ films begin to decompose. After being further annealed at 850 $^\circ$C for 3 min, HfO₂ films decomposes completely, partially to form Hf-silicide and partially to form gaseous HfO. Two chemical reactions are responsible for this decomposition process. A small amount of Hf-silicide, which is formed at the very beginning of growth, may result in the films grown subsequently to be loosened, and thereby leads to a relatively low decomposition temperature.

Keywords: surface and interface high-k oxides photon–electron spectroscopy

Received: 11 April 2010
Revised: 06 July 2010
Accepted manuscript online:

PACS:	64.75.-g	(Phase equilibria)
	68.55.A-	(Nucleation and growth)
	81.15.Ef
	81.40.Ef	(Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 60877017), the Shanghai Leading Academic Disciplines Foundation (Grant No. S30107), and the Innovation Program of Shanghai Municipal Education Commission (Grant No. 08YZ04).

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Xu Run(徐闰), Gong Wei-Ming(贡伟明), Yan Zhi-Jun(阎志军), Wang Lin-Jun(王林军), and Xia Yi-Ben(夏义本) Thermal stability of HfO₂/Si (001) films prepared by electron beam evaporation in ultrahigh vacuum using atomic oxygen 2010 Chin. Phys. B 19 128204

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Thermal stability of HfO2/Si (001) films prepared by electron beam evaporation in ultrahigh vacuum using atomic oxygen

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Thermal stability of HfO₂/Si (001) films prepared by electron beam evaporation in ultrahigh vacuum using atomic oxygen