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Thermal stability of HfO2/Si (001) films prepared by electron beam evaporation in ultrahigh vacuum using atomic oxygen |
| Xu Run(徐闰)a)†, Gong Wei-Ming(贡伟明) a), Yan Zhi-Jun(阎志军)b), Wang Lin-Jun(王林军)a), and Xia Yi-Ben(夏义本) a) |
| a School of Materials Science & Engineering, Shanghai University, Shanghai 200072, China; b Department of Applied Physics, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China |
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Abstract HfO2 films on silicon substrates have been prepared by electron beam evaporation in ultrahigh vacuum using atomic oxygen. Synchrotron radiation photon–electron spectroscopy was used to investigate the thermal stability of HfO2 films under an ultrahigh vacuum environment. At the temperature of 750 $^\circ$C, HfO2 films begin to decompose. After being further annealed at 850 $^\circ$C for 3 min, HfO2 films decomposes completely, partially to form Hf-silicide and partially to form gaseous HfO. Two chemical reactions are responsible for this decomposition process. A small amount of Hf-silicide, which is formed at the very beginning of growth, may result in the films grown subsequently to be loosened, and thereby leads to a relatively low decomposition temperature.
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Received: 11 April 2010
Revised: 06 July 2010
Accepted manuscript online:
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PACS:
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64.75.-g
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(Phase equilibria)
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68.55.A-
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(Nucleation and growth)
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81.15.Ef
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81.40.Ef
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(Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization)
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| Fund: Project supported by the National Natural Science Foundation of China (Grant No. 60877017), the Shanghai Leading Academic Disciplines Foundation (Grant No. S30107), and the Innovation Program of Shanghai Municipal Education Commission (Grant No. 08YZ04). |
Cite this article:
Xu Run(徐闰), Gong Wei-Ming(贡伟明), Yan Zhi-Jun(阎志军), Wang Lin-Jun(王林军), and Xia Yi-Ben(夏义本) Thermal stability of HfO2/Si (001) films prepared by electron beam evaporation in ultrahigh vacuum using atomic oxygen 2010 Chin. Phys. B 19 128204
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