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Chin. Phys. B, 2008, Vol. 17(4): 1394-1399    DOI: 10.1088/1674-1056/17/4/040
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Effects of deposition pressure and plasma power on the growth and properties of boron-doped microcrystalline silicon films

Chen Yong-Sheng (陈永生)a)b)†, Yang Shi-E(杨仕娥)a), Wang Jian-Hua(汪建华)c), Lu Jing-Xiao(卢景霄)a), Gao Xiao-Yong(郜小勇)a), Gu Jin-Hua(谷景华)a), Zheng Wen(郑文)a), and Zhao Shang-Li(赵尚丽)a)
a Key Laboratory of Material Physics, Department of Physics, Zhengzhou University, Zhengzhou 450052, China; b Institute of Plasma Physics, Chinese Academy of Sciences, Hefei 230031, China; c Depart of Materials Science and Engineering, Wuhan Institute of Technology, Wuhan 430073, China
Abstract  Using diborane as doping gas, p-doped $\mu $c-Si:H layers are deposited by using the plasma enhanced chemical vapour deposition (PECVD) technology. The effects of deposition pressure and plasma power on the growth and the properties of $\mu $c-Si:H layers are investigated. The results show that the deposition rate, the electrical and the structural properties are all strongly dependent on deposition pressure and plasma power. Boron-doped $\mu $c-Si:H films with a dark conductivity as high as 1.42 $\Omega ^{ - 1}\cdot$cm$^{ - 1}$ and a crystallinity of above 50% are obtained. With this p-layer, $\mu $c-Si:H solar cells are fabricated. In addition, the mechanism for the effects of deposition pressure and plasma power on the growth and the properties of boron-doped $\mu $c-Si:H layers is discussed.
Keywords:  boron-doped $\mu $c-Si:H films      thin film solar cells      Raman crystallinity      dark conductivity  
Received:  17 October 2007      Revised:  21 November 2007      Accepted manuscript online: 
PACS:  68.55.A- (Nucleation and growth)  
  68.55.Ln (Defects and impurities: doping, implantation, distribution, concentration, etc.)  
  73.50.Pz (Photoconduction and photovoltaic effects)  
  73.61.Cw (Elemental semiconductors)  
  78.30.Am (Elemental semiconductors and insulators)  
  81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))  
Fund: Project supported by the State Key Development Program for Basic Research of China (Grant No 2006CB202601), and Basic Research Project of Henan province, China (Grant No 072300410140).

Cite this article: 

Chen Yong-Sheng (陈永生), Yang Shi-E(杨仕娥), Wang Jian-Hua(汪建华), Lu Jing-Xiao(卢景霄), Gao Xiao-Yong(郜小勇), Gu Jin-Hua(谷景华), Zheng Wen(郑文), and Zhao Shang-Li(赵尚丽) Effects of deposition pressure and plasma power on the growth and properties of boron-doped microcrystalline silicon films 2008 Chin. Phys. B 17 1394

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