Intensity modulation in single-mode microchip Nd:YAG lasers with asymmetric external cavity
Tan Yi-Dong(谈宜东)†, Zhang Shu-Lian(张书练), Liu Wei-Xin(刘维新), and MaoWei(毛威)
State Key Laboratory of Precision Measurement Technology and Instruments, Department of Precision Instruments, Tsinghua University, Beijing 100084, China
Abstract Intensity modulation induced by the asymmetric external cavity in single-mode microchip Nd:YAG lasers is presented. Two kinds of experimental results are discussed based on multiple feedback effects. In one case, the intensity modulation curve is a normal sine wave, whose fringe frequency is four times higher than that of a conventional optical feedback system, caused by multiple feedback effects. In the other case, the intensity modulation curve is the overlapping of the above quadruple-frequency signal and conventional optical feedback signal, which is determined by the additional phase difference induced by the asymmetric external cavity. The theoretical analyses are in good agreement with the experimental results. The quadruple-frequency modulation of the laser output intensity can greatly increase the resolution of displacement measurement of an optical feedback system.
Received: 29 June 2006
Revised: 06 November 2006
Accepted manuscript online:
PACS:
42.55.Rz
(Doped-insulator lasers and other solid state lasers)
Fund: Project supported by the
National Natural Science Foundation of China (Grant No~60438010).
Cite this article:
Tan Yi-Dong(谈宜东), Zhang Shu-Lian(张书练), Liu Wei-Xin(刘维新), and MaoWei(毛威) Intensity modulation in single-mode microchip Nd:YAG lasers with asymmetric external cavity 2007 Chinese Physics 16 1020
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