Charge storage characteristics of hydrogenated nanocrystalline silicon film prepared by rapid thermal annealing

doi:10.1088/1009-1963/16/3/039

Abstract

Abstract The early stages of hydrogenated nanocrystalline silicon (nc-Si:H) films deposited by plasma-enhanced chemical vapour deposition were characterized by atomic force microscopy. To increase the density of nanocrystals in the nc-Si:H films, the films were annealed by rapid thermal annealing (RTA) at different temperatures and then analysed by Raman spectroscopy. It was found that the recrystallization process of the film was optimal at around 1000℃. The effects of different RTA conditions on charge storage were characterized by capacitance--voltage measurement. Experimental results show that nc-Si:H films obtained by RTA have good charge storage characteristics for nonvolatile memory.

Keywords: nc-Si hydrogenated nanocrystalline silicon charge storage rapid thermal annealing

Received: 08 May 2006
Revised: 28 September 2006
Accepted manuscript online:

PACS:	73.61.Cw	(Elemental semiconductors)
	68.37.Ps	(Atomic force microscopy (AFM))
	78.30.Am	(Elemental semiconductors and insulators)
	81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
	81.40.Ef	(Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization)

Fund: Project supported by the National Basic Research Program of China (973 Program) (Grant No~2006CB302706) and the National Natural Science Foundation of China (Grant Nos~90607022, 90401002, 90207004, and 60506005).

Cite this article:

Li Zhi-Gang(李志刚), Long Shi-Bing(龙世兵), Liu Ming(刘明), Wang Cong-Shun(王丛舜), Jia Rui(贾锐), Lv Jin(闾锦), and Shi Yi(施毅) Charge storage characteristics of hydrogenated nanocrystalline silicon film prepared by rapid thermal annealing 2007 Chinese Physics 16 795

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Charge storage characteristics of hydrogenated nanocrystalline silicon film prepared by rapid thermal annealing

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