Absolute oscillator strength densities below 100eV of N2
Sun Jian-Min (孙建敏)a, Zhong Zhi-Ping (钟志萍)b, Zhu Lin-Fan (朱林繁)a, Liu Xiao-Jing (刘小井)a, Yuan Zhen-Sheng (苑震生)a, Xu Ke-Zun (徐克尊)a
a Hefei National Laboratory for Physical Sciences at Microscale, Department of Modern Physics,University of Science and Technology of China, Hefei 230026, China; b Department of Physics, Graduate School of the Chinese Academy of Sciences, Beijing 100039, China
Abstract The absolute optical oscillator strength density (OOSD) and generalized oscillator strength densities (GOSDs) below 100eV of N$_2$ are determined with an incident electron energy of 2500eV and an energy resolution of 100 meV. The absolute generalized oscillator strengths (GOSs) for two transitions to the superexcited states at 23 and 31.4eV are determined and their momentum transfer dependence behaviours are discussed.
Received: 25 November 2004
Revised: 10 January 2005
Accepted manuscript online:
PACS:
33.70.Ca
(Oscillator and band strengths, lifetimes, transition moments, and Franck-Condon factors)
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