Modulation instability of quasi-plane-wave optical beams in biased photorefractive-photovoltaic crystals

doi:10.1088/1009-1963/13/12/017

Abstract

Abstract We investigate the modulation instability of quasi-plane-wave optical beams in biased photorefractive－photovoltaic crystals by globally treating the space-charge field. The modulation instability growth rate is obtained, which depends on the external bias field, on the bulk photovoltaic effect, and on the ratio of the optical beam's intensity to that of the dark irradiance. Our analysis indicates that this modulation instability growth rate is identical to the modulation instability growth rate studied previously in biased photorefractive－nonphotovoltaic crystals when the bulk photovoltaic effect is negligible for shorted circuits, and predicts the modulation instability growth rate in open- and closed-circuit photorefractive－photovoltaic crystals when the external bias field is absent.

Keywords: optical spatial solitons modulation instability photorefractive effect

Received: 31 March 2004
Revised: 24 May 2004
Accepted manuscript online:

PACS:	42.65.Hw	(Phase conjugation; photorefractive and Kerr effects)
	72.40.+w	(Photoconduction and photovoltaic effects)
	42.65.Tg	(Optical solitons; nonlinear guided waves)
	77.22.Jp	(Dielectric breakdown and space-charge effects)

Fund: Project supported by the National Natural Science Foundation of China (Grant No 60078004), and by the Director Foundation of Xi'an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences.

Cite this article:

Lu Ke-Qing (卢克清), Zhao Wei (赵卫), Yang Yan-Long (杨延龙), Zhu Xiang-Ping (朱香平), Li Jin-Ping (李金萍), Zhang Yan-Peng (张颜鹏) Modulation instability of quasi-plane-wave optical beams in biased photorefractive-photovoltaic crystals 2004 Chinese Physics 13 2077

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Modulation instability of quasi-plane-wave optical beams in biased photorefractive-photovoltaic crystals

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