Random telegraph noise on the threshold voltage of multi-level flash memory

doi:10.1088/1674-1056/26/1/018502

Abstract We investigate the impact of random telegraph noise (RTN) on the threshold voltage of multi-level NOR flash memory. It is found that the threshold voltage variation (ΔV_th) and the distribution due to RTN increase with the programmed level (V_th) of flash cells. The gate voltage dependence of RTN amplitude and the variability of RTN time constants suggest that the large RTN amplitude and distribution at the high program level is attributed to the charge trapping in the tunneling oxide layer induced by the high programming voltages. A three-dimensional TCAD simulation based on a percolation path model further reveals the contribution of those trapped charges to the threshold voltage variation and distribution in flash memory.

Keywords: random telegraph noise NOR flash memory percolation path oxide charges

Received: 29 August 2016
Revised: 26 September 2016
Accepted manuscript online:

PACS:	85.30.De	(Semiconductor-device characterization, design, and modeling)
	73.40.Qv	(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
	85.40.Qx	(Microcircuit quality, noise, performance, and failure analysis)

Fund: Project supported by the National Research Program of China (Grant No. 2016YFB0400402), the Natural Science Foundation of Jiangsu Province, China (Grant No. BK20141321), and the National Natural Science Foundation of China (Grant No. 61627804).

Corresponding Authors: Xiaoli Ji
E-mail: xji@nju.edu.cn

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Yiming Liao(廖轶明), Xiaoli Ji(纪小丽), Yue Xu(徐跃), Chengxu Zhang(张城绪), Qiang Guo(郭强), Feng Yan(闫锋) Random telegraph noise on the threshold voltage of multi-level flash memory 2017 Chin. Phys. B 26 018502

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