Covalent bonding and J-J mixing effects on the EPR parameters of Er3+ ions in GaN crystal

doi:10.1088/1674-1056/25/7/077601

Abstract

The EPR parameters of trivalent Er³⁺ ions doped in hexagonal GaN crystal have been studied by diagonalizing the 364×364 complete energy matrices. The results indicate that the resonance ground states may be derived from the Kramers doublet Γ₆. The EPR g-factors may be ascribed to the stronger covalent bonding and nephelauxetic effects compared with other rare-earth doped complexes, as a result of the mismatch of ionic radii of the impurity Er³⁺ ion and the replaced Ga³⁺ ion apart from the intrinsic covalency of host GaN. Furthermore, the J-J mixing effects on the EPR parameters from the high-lying manifolds have been evaluated. It is found that the dominant J-J mixing contribution is from the manifold ²K_15/2, which accounts for about 2.5%. The next important J-J contribution arises from the crystal-field mixture between the ground state ⁴I_15/2 and the first excited state ⁴I_13/2, and is usually less than 0.2%. The contributions from the rest states may be ignored.

Keywords: EPR parameters covalent bonding effect J-J mixing effect rare-earth ion Er³⁺

Received: 01 December 2015
Revised: 18 March 2016
Accepted manuscript online:

PACS:	76.30.-v	(Electron paramagnetic resonance and relaxation)
	75.10.Dg	(Crystal-field theory and spin Hamiltonians)
	31.15.-p	(Calculations and mathematical techniques in atomic and molecular physics)
	76.30.Kg	(Rare-earth ions and impurities)

Fund:

Project supported by the Foundation of Education Department of Shaanxi Province, China (Grant No. 16JK1461).

Corresponding Authors: Rui-Peng Chai
E-mail: chairuipeng2005@163.com

Cite this article:

Rui-Peng Chai(柴瑞鹏), Long Li(李隆), Liang Liang(梁良), Qing Pang(庞庆) Covalent bonding and J-J mixing effects on the EPR parameters of Er³⁺ ions in GaN crystal 2016 Chin. Phys. B 25 077601

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Covalent bonding and J-J mixing effects on the EPR parameters of Er³⁺ ions in GaN crystal

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