Fractional-dimensional approach for excitons in GaAsfilms on AlxGa1-xAs substrates

doi:10.1088/1674-1056/25/3/037310

Abstract Binding energies of excitons in GaAs films on Al_xGa_1-xAs substrates are studied theoretically with the fractional-dimensional approach. In this approach, the real anisotropic “exciton+film” semiconductor system is mapped into an effective fractional-dimensional isotropic space. For different aluminum concentrations and substrate thicknesses, the exciton binding energies are obtained as a function of the film thickness. The numerical results show that, for different aluminum concentrations and substrate thicknesses, the exciton binding energies in GaAs films on Al_xGa_1-xAs substrates all exhibit their maxima with increasing film thickness. It is also shown that the binding energies of heavy-hole and light-hole excitons both have their maxima with increasing film thickness.

Keywords: exciton binding energy GaAs film fractional-dimensional approach

Received: 01 September 2015
Revised: 11 December 2015
Accepted manuscript online:

PACS:	73.61.-r	(Electrical properties of specific thin films)
	73.90.+f	(Other topics in electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 11304011) and the Fundamental Research Funds for the Central Universities, China.

Corresponding Authors: Qiang Tian
E-mail: qtianbnu@sina.com

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Zhen-Hua Wu(武振华), Lei Chen(陈蕾), Qiang Tian(田强) Fractional-dimensional approach for excitons in GaAsfilms on Al_xGa_1-xAs substrates 2016 Chin. Phys. B 25 037310

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Fractional-dimensional approach for excitons in GaAsfilms on AlxGa1-xAs substrates

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Fractional-dimensional approach for excitons in GaAsfilms on Al_xGa_1-xAs substrates