The design and manufacture of a notch structure for a planar InP Gunn diode

doi:10.1088/1674-1056/22/2/027202

Abstract A planar InP-based Gunn diode with a notch doping structure is designed and fabricated for being integrated into millimeter-wave and terahertz integrated circuits. We design two kinds of InP-based Gunn diodes. One has a fixed diameter of cathode area, but it has a variable spacing between anode and cathode; the other has a fixed spacing, but it has a varying diameter. The threshold voltage and saturated current exhibit their strong dependences on spacing (10 μm-20 μm) and diameter (40 μm-60 μm) of InP Gunn diode. The threshold voltage is approximately 4.5 V and the saturated current is in a range of 293 mA-397 mA. In this work, the diameter of the diode and the space between anode and athode are optimized. The devices are fabricated using wet etching technique and show excellent performances. The results strongly suggest that the low-cost and reliable InP planar Gunn diodes can be used as single chip terahertz sources.

Keywords: InP Gunn device millimeter generation planar Gunn diode

Received: 15 June 2012
Revised: 27 July 2012
Accepted manuscript online:

PACS:	72.80.Ey	(III-V and II-VI semiconductors)
	73.40.Lg
	73.61.Ey	(III-V semiconductors)

Fund: Project supported by the Main Direction Program of Knowledge Innovation of the Chinese Academy of Sciences (Grant No. 2A2011YYYJ-1123).

Corresponding Authors: Jia Rui
E-mail: jiarui@ime.ac.cn

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Bai Yang (白阳), Jia Rui (贾锐), Wu De-Qi (武德起), Jin Zhi (金智), Liu Xin-Yu (刘新宇 ) The design and manufacture of a notch structure for a planar InP Gunn diode 2013 Chin. Phys. B 22 027202

[1]	Herbert E and Ridha K 2004 Microwave Theory and Techniques 52 2371
[2]	Heribert E and George I H 1995 Microwave and Guided Wave Letters 5 385
[3]	Michael C K 2007 IRMMW-THz Septemper 2-9 p. 647
[4]	Montanari A, Forster A, Lepsa M I and Luth H 2005 Solid State Electron. 49 245
[5]	Yilmazoglu O, Mutamba K, Pavlidis D and Karaduman T 2008 Electron. Dev. 55 563
[6]	Herstellung J S 2003 Ph. D. Dissertation (Aachen: Uniersity of Aachen RWTH)
[7]	Ko D S, Lee S J, Baek T J, Choi S G, Han M, Park H C, Rhee J K, Jung J H and Park Y W 2011 Microwave and Wireless Components Letters 21 3
[8]	Herbert E 2010 Electron. Lett. 46 422
[9]	Pilgrim N J, Khalid A, Dunn G M and Cumming D R S 2008 Semicond. Sci. Technol. 23 075013
[10]	Dunn G M and Kearney M J 2003 Semicond. Sci. Technol. 18 794
[11]	Khalid A, Pilgrim N J, Dunn G M, Holland M C, Stanley C R, Thayne I G and Cumming D R S 2007 Electron. Dev. Lett. 28 849
[12]	Huang J, Yang H, Tian C, Dong J R, Zhang H Y and Guo T Y 2010 Chin. Phys. B 19 127203
[13]	Liu J Q, Zybura M F, Pao Y C and Westerman R 1998 Indium Phosphide and Related Materials, May 11-15, 1998, Tsukuba, p. 187
[14]	Kim M R, Lee S D, Lee J S, Kwak N S, Kim S D and Rhee J K 2008 GSMM 2008, April 21-24, 2008, Nanjing, China, p. 21
[15]	Lee S D, Lee J S, Kwak N S, Kim M R, Kim S D and Rhee J K 2008 GSMM 2008, April 21-24, 2008, Nanjing, China p. 17

[1]	Investigation of chlorine-based etchants in wet and dry etching technology for an InP planar Gunn diode Bai Yang (白阳), Jia Rui (贾锐), Wu De-Qi (武德起), Jin Zhi (金智), Liu Xin-Yu (刘新宇), Lin Mei-Yu (林美玉). Chin. Phys. B, 2013, 22(8): 087202.
[2]	Design and manufacture of planar GaAs Gunn diode for millimeter wave application Huang Jie(黄杰), Yang Hao(杨浩), Tian Chao(田超), Dong Jun-Rong(董军荣), Zhang Hai-Ying(张海英), and Guo Tian-Yi(郭天义). Chin. Phys. B, 2010, 19(12): 127203.

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The design and manufacture of a notch structure for a planar InP Gunn diode

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