Effect of F doping on capacitance－voltage characteristics of SiCOH low-k films metal－insulator－semiconductor structure

doi:10.1088/1674-1056/19/5/057701

Abstract This paper investigates the capacitance--voltage ($C$--$V$) characteristics of F doping SiCOH low dielectric constant films metal--insulator--semiconductor structure. The F doping SiCOH films are deposited by decamethylcyclopentasiloxane (DMCPS) and trifluromethane (CHF$_{3})$ electron cyclotron resonance plasmas. With the CHF$_{3}$/DMCPS flow rate ratio from 0 to 0.52, the positive excursion of $C$--$V$ curves and the increase of flat-band voltage $V_{\rm FB}$ from $-6.1$ V to 32.2 V are obtained. The excursion of $C$--$V$ curves and the shift of $V_{\rm FB}$ are related to the change of defects density and type at the Si/SiCOH interface due to the decrease of Si and O concentrations, and the increase of F concentration. At the CHF$_{3}$/DMCPS flow rate ratio is 0.12, the compensation of F-bonding dangling bond to Si dangling bond leads to a small $V_{\rm FB}$ of 2.0 V.

Keywords: F-SiCOH low-k dielectrics capacitance--voltage characteristic

Received: 04 February 2009
Revised: 30 August 2009
Accepted manuscript online:

PACS:	68.55.Ln	(Defects and impurities: doping, implantation, distribution, concentration, etc.)
	77.22.Ch	(Permittivity (dielectric function))
	73.40.Qv	(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
	85.40.Ry	(Impurity doping, diffusion and ion implantation technology)

Fund: Project supported by the National Natural Science Foundation of China (Grant No.~10575074).

Cite this article:

Ye Chao(叶超) and Ning Zhao-Yuan(宁兆元) Effect of F doping on capacitance－voltage characteristics of SiCOH low-k films metal－insulator－semiconductor structure 2010 Chin. Phys. B 19 057701

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Effect of F doping on capacitance－voltage characteristics of SiCOH low-k films metal－insulator－semiconductor structure

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