Influences of quantum noises on direct-modulated properties of 1.3-μm InGaAsP/InP laser diodes
Wang Jun(王俊)a)c)†, Ma Xiao-Yu(马骁宇)a), Bai Yi-Ming(白一鸣)b), Cao Li(曹力)c), and Wu Da-Jin(吴大进)c)
a National Engineering Research Center for Opto-electronic Device, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; b Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; c Department of Physics, Huazhong University of Science and Technology, Wuhan 430074, China
Abstract Due to the zero dispersion point at 1.3μm in optical fibres, 1.3-μm InGaAsP/InP laser diodes have become main light sources in fibre communication systems recently. Influences of quantum noises on direct-modulated properties of single-mode 1.3-μm InGaAsP/InP laser diodes are investigated in this article. Considering the carrier and photon noises and the cross-correlation between the two noises, the power spectrum of the photon density and the signal-to-noise ratio (SNR) of the direct-modulated single-mode laser system are calculated using the linear approximation method. We find that the stochastic resonance (SR) always appears in the dependence of the SNR on the bias current density, and is strongly affected by the cross-correlation coefficient between the carrier and photon noises, the frequency of modulation signal, and the photon lifetime in the laser cavity. Hence, it is promising to use the SR mechanism to enhance the SNR of direct-modulated InGaAsP/InP laser diodes and improve the quality of optical fibre communication systems.
Received: 19 October 2005
Revised: 14 May 2006
Accepted manuscript online:
Fund: Project supported by the National Natural Science Foundation of China (Grant No 10275025).
Cite this article:
Wang Jun(王俊), Ma Xiao-Yu(马骁宇), Bai Yi-Ming(白一鸣), Cao Li(曹力), and Wu Da-Jin(吴大进) Influences of quantum noises on direct-modulated properties of 1.3-μm InGaAsP/InP laser diodes 2006 Chinese Physics 15 2125
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