The effect of the ferromagnetic metal layer on tunnelling conductance and magnetoresistance in double magnetic planar junctions
Xie Zheng-Wei (谢征微)ab, Li Bo-Zang (李伯臧)a, Li Yu-Xian (李玉现)a
a Institute of Physics and Center for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100080, China; b Department of Physics, Sichuan Normal University, Chengdu 610066, China
Abstract Based on the free-electron approximation, we investigate the effect of the ferromagnetic metal layer on the tunnelling magnetoresistance (TMR) and tunnelling conductance (TC) in the double magnetic tunnel junctions (DMTJs) of the structure NM/FM/I(S)/NM/I(S)/FM/NM, where FM, NM and I(S) represent the ferromagnetic metal, nonmagnetic metal and insulator (semiconductor), respectively. The FM, I(S) and inner NM layers are of finite thickness, while the thickness of the outer NM layer is infinite. The calculated results show that, due to the spin-dependent interfacial potential barriers caused by electronic band mismatch between the various magnetic and nonmagnetic layers, the dependences of the TMR and TC on the thicknesses of the FM layers exhibit oscillations, and a much higher TMR can be obtained for suitable thicknesses of FM layers.
Received: 27 March 2002
Revised: 31 May 2002
Accepted manuscript online:
Fund: Project supported by the National Natural Science Foundation of China (Grant No 10074075) and by the State Key Program of Basic Research of China (Grant No G1999064509).
Cite this article:
Xie Zheng-Wei (谢征微), Li Bo-Zang (李伯臧), Li Yu-Xian (李玉现) The effect of the ferromagnetic metal layer on tunnelling conductance and magnetoresistance in double magnetic planar junctions 2002 Chinese Physics 11 1060
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