中国物理B ›› 2018, Vol. 27 ›› Issue (8): 88501-088501.doi: 10.1088/1674-1056/27/8/088501
• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇 下一篇
Weizhong Chen(陈伟中), Yao Huang(黄垚), Lijun He(贺利军), Zhengsheng Han(韩郑生), Yi Huang(黄义)
Weizhong Chen(陈伟中)1,2, Yao Huang(黄垚)1, Lijun He(贺利军)1, Zhengsheng Han(韩郑生)2,3, Yi Huang(黄义)1
摘要:
A reverse-conducting lateral insulated-gate bipolar transistor (RC-LIGBT) with a trench oxide layer (TOL), featuring a vertical N-buffer and P-collector is proposed. Firstly, the TOL enhances both of the surface and bulk electric fields of the N-drift region, thus the breakdown voltage (BV) is improved. Secondly, the vertical N-buffer layer increases the voltage drop VPN of the P-collector/N-buffer junction, thus the snapback is suppressed. Thirdly, the P-body and the vertical N-buffer act as the anode and the cathode, respectively, to conduct the reverse current, thus the inner diode is integrated. As shown by the simulation results, the proposed RC-LIGBT exhibits trapezoidal electric field distribution with BV of 342.4 V, which is increased by nearly 340% compared to the conventional RC-LIGBT with triangular electric fields of 100.2 V. Moreover, the snapback is eliminated by the vertical N-buffer layer design, thus the reliability of the device is improved.
中图分类号: (Semiconductor-device characterization, design, and modeling)