A snapback-free TOL-RC-LIGBT with vertical P-collector and N-buffer design

doi:10.1088/1674-1056/27/8/088501

中国物理B ›› 2018, Vol. 27 ›› Issue (8): 88501-088501.doi: 10.1088/1674-1056/27/8/088501

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

A snapback-free TOL-RC-LIGBT with vertical P-collector and N-buffer design

Weizhong Chen(陈伟中), Yao Huang(黄垚), Lijun He(贺利军), Zhengsheng Han(韩郑生), Yi Huang(黄义)

1 College of Electronics Engineering, Chongqing University of Posts and Telecommunications, Chongqing 400065, China;
2 Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;
3 University of Chinese Academy of Sciences, Beijing 100049, China

收稿日期:2018-04-09 修回日期:2018-05-17 出版日期:2018-08-05 发布日期:2018-08-05
通讯作者: Weizhong Chen, Yao Huang E-mail:cwz@cqu.edu.cn;632752486@qq.com
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 61604027), the Basic and Advanced Technology Research Project of Chongqing Municipality, China (Grant No. cstc2016jcyjA1923), the Scientific and Technological Research Foundation of Chongqing Municipal Education Commission, China (Grant No. KJ1500404), the Youth Natural Science Foundation of Chongqing University of Posts and Telecommunications, China (Grant Nos. A2015-50 and A2015-52), the Chongqing Key Laboratory Improvement Plan, China (Chongqing Key Laboratory of Photo Electronic Information Sensing and Transmitting Technology) (Grant No. cstc2014pt-sy40001), and the University Innovation Team Construction Plan Funding Project of Chongqing, China (Architecture and Core Technologies of Smart Medical System) (Grant No. CXTDG201602009).

A snapback-free TOL-RC-LIGBT with vertical P-collector and N-buffer design

Weizhong Chen(陈伟中)^1,2, Yao Huang(黄垚)¹, Lijun He(贺利军)¹, Zhengsheng Han(韩郑生)^2,3, Yi Huang(黄义)¹

1 College of Electronics Engineering, Chongqing University of Posts and Telecommunications, Chongqing 400065, China;
2 Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;
3 University of Chinese Academy of Sciences, Beijing 100049, China

Received:2018-04-09 Revised:2018-05-17 Online:2018-08-05 Published:2018-08-05
Contact: Weizhong Chen, Yao Huang E-mail:cwz@cqu.edu.cn;632752486@qq.com
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 61604027), the Basic and Advanced Technology Research Project of Chongqing Municipality, China (Grant No. cstc2016jcyjA1923), the Scientific and Technological Research Foundation of Chongqing Municipal Education Commission, China (Grant No. KJ1500404), the Youth Natural Science Foundation of Chongqing University of Posts and Telecommunications, China (Grant Nos. A2015-50 and A2015-52), the Chongqing Key Laboratory Improvement Plan, China (Chongqing Key Laboratory of Photo Electronic Information Sensing and Transmitting Technology) (Grant No. cstc2014pt-sy40001), and the University Innovation Team Construction Plan Funding Project of Chongqing, China (Architecture and Core Technologies of Smart Medical System) (Grant No. CXTDG201602009).

摘要/Abstract

摘要：

A reverse-conducting lateral insulated-gate bipolar transistor (RC-LIGBT) with a trench oxide layer (TOL), featuring a vertical N-buffer and P-collector is proposed. Firstly, the TOL enhances both of the surface and bulk electric fields of the N-drift region, thus the breakdown voltage (BV) is improved. Secondly, the vertical N-buffer layer increases the voltage drop V_PN of the P-collector/N-buffer junction, thus the snapback is suppressed. Thirdly, the P-body and the vertical N-buffer act as the anode and the cathode, respectively, to conduct the reverse current, thus the inner diode is integrated. As shown by the simulation results, the proposed RC-LIGBT exhibits trapezoidal electric field distribution with BV of 342.4 V, which is increased by nearly 340% compared to the conventional RC-LIGBT with triangular electric fields of 100.2 V. Moreover, the snapback is eliminated by the vertical N-buffer layer design, thus the reliability of the device is improved.

关键词: reverse-conducting lateral insulated-gate bipolar transistor (RC-LIGBT), breakdown voltage, snapback phenomenon

Abstract:

Key words: reverse-conducting lateral insulated-gate bipolar transistor (RC-LIGBT), breakdown voltage, snapback phenomenon

中图分类号: (Semiconductor-device characterization, design, and modeling)

85.30.De

85.30.Pq (Bipolar transistors) 85.30.Tv (Field effect devices)

陈伟中, 黄垚, 贺利军, 韩郑生, 黄义. A snapback-free TOL-RC-LIGBT with vertical P-collector and N-buffer design[J]. 中国物理B, 2018, 27(8): 88501-088501.

Weizhong Chen(陈伟中), Yao Huang(黄垚), Lijun He(贺利军), Zhengsheng Han(韩郑生), Yi Huang(黄义). A snapback-free TOL-RC-LIGBT with vertical P-collector and N-buffer design[J]. Chin. Phys. B, 2018, 27(8): 88501-088501.

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A snapback-free TOL-RC-LIGBT with vertical P-collector and N-buffer design

A snapback-free TOL-RC-LIGBT with vertical P-collector and N-buffer design

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