中国物理B ›› 2018, Vol. 27 ›› Issue (4): 48502-048502.doi: 10.1088/1674-1056/27/4/048502

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Closed-form breakdown voltage/specific on-resistance model using charge superposition technique for vertical power double-diffused metal-oxide-semiconductor device with high-κ insulator

Xue Chen(陈雪), Zhi-Gang Wang(汪志刚), Xi Wang(王喜), James B Kuo   

  1. 1. School of Information Science and Technology, Southwest Jiao Tong University, Chengdu 611756, China;
    2. “National” Taiwan University, Taipei, China
  • 收稿日期:2017-12-12 修回日期:2018-01-15 出版日期:2018-04-05 发布日期:2018-04-05
  • 通讯作者: Zhi-Gang Wang E-mail:zhigangwang@swjtu.edu.cn
  • 基金资助:

    Project supported by the National Natural Science Foundation of China (Grant No. 61404110) and the National Higher-education Institution General Research and Development Project, China (Grant No. 2682014CX097).

Closed-form breakdown voltage/specific on-resistance model using charge superposition technique for vertical power double-diffused metal-oxide-semiconductor device with high-κ insulator

Xue Chen(陈雪)1, Zhi-Gang Wang(汪志刚)1, Xi Wang(王喜)1, James B Kuo2   

  1. 1. School of Information Science and Technology, Southwest Jiao Tong University, Chengdu 611756, China;
    2. “National” Taiwan University, Taipei, China
  • Received:2017-12-12 Revised:2018-01-15 Online:2018-04-05 Published:2018-04-05
  • Contact: Zhi-Gang Wang E-mail:zhigangwang@swjtu.edu.cn
  • Supported by:

    Project supported by the National Natural Science Foundation of China (Grant No. 61404110) and the National Higher-education Institution General Research and Development Project, China (Grant No. 2682014CX097).

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摘要：

An improved vertical power double-diffused metal-oxide-semiconductor (DMOS) device with a p-region(P1) and high-κ insulator vertical double-diffusion metal-oxide-semiconductor (HKP-VDMOS) is proposed to achieve a better performance on breakdown voltage (BV)/specific on-resistance (Ron,sp) than conventional VDMOS with a high-κ insulator (CHK-VDMOS). The main mechanism is that with the introduction of the P-region, an extra electric field peak is generated in the drift region of HKP-VDMOS to enhance the breakdown voltage. Due to the assisted depletion effect of this p-region, the specific on-resistance of the device could be reduced because of the high doping density of the N-type drift region. Meanwhile, based on the superposition of the depleted charges, a closed-form model for electric field/breakdown voltage is generally derived, which is in good agreement with the simulation result within 10% of error. An HKP-VDMOS device with a breakdown voltage of 600 V, a reduced specific on-resistance of 11.5 mΩ·cm2 and a figure of merit (FOM) (BV2/Ron,sp) of 31.2 MW·cm-2 shows a substantial improvement compared with the CHK-VDMOS device.

关键词: superposition, HKP-VDMOS, breakdown voltage, specific on-resistance

Abstract:

An improved vertical power double-diffused metal-oxide-semiconductor (DMOS) device with a p-region(P1) and high-κ insulator vertical double-diffusion metal-oxide-semiconductor (HKP-VDMOS) is proposed to achieve a better performance on breakdown voltage (BV)/specific on-resistance (Ron,sp) than conventional VDMOS with a high-κ insulator (CHK-VDMOS). The main mechanism is that with the introduction of the P-region, an extra electric field peak is generated in the drift region of HKP-VDMOS to enhance the breakdown voltage. Due to the assisted depletion effect of this p-region, the specific on-resistance of the device could be reduced because of the high doping density of the N-type drift region. Meanwhile, based on the superposition of the depleted charges, a closed-form model for electric field/breakdown voltage is generally derived, which is in good agreement with the simulation result within 10% of error. An HKP-VDMOS device with a breakdown voltage of 600 V, a reduced specific on-resistance of 11.5 mΩ·cm2 and a figure of merit (FOM) (BV2/Ron,sp) of 31.2 MW·cm-2 shows a substantial improvement compared with the CHK-VDMOS device.

Key words: superposition, HKP-VDMOS, breakdown voltage, specific on-resistance

中图分类号:  (Semiconductor-device characterization, design, and modeling)

  • 85.30.De
77.55.df (For silicon electronics) 51.50.+v (Electrical properties)