Closed-form breakdown voltage/specific on-resistance model using charge superposition technique for vertical power double-diffused metal-oxide-semiconductor device with high- κ insulator
陈雪, 汪志刚, 王喜, James B Kuo
Closed-form breakdown voltage/specific on-resistance model using charge superposition technique for vertical power double-diffused metal-oxide-semiconductor device with high- κ insulator
Xue Chen(陈雪), Zhi-Gang Wang(汪志刚), Xi Wang(王喜), James B Kuo
中国物理B . 2018, (4): 48502 -048502 .  DOI: 10.1088/1674-1056/27/4/048502