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Closed-form breakdown voltage/specific on-resistance model using charge superposition technique for vertical power double-diffused metal-oxide-semiconductor device with high-
κ
insulator
陈雪, 汪志刚, 王喜, James B Kuo
Closed-form breakdown voltage/specific on-resistance model using charge superposition technique for vertical power double-diffused metal-oxide-semiconductor device with high-
κ
insulator
Xue Chen(陈雪), Zhi-Gang Wang(汪志刚), Xi Wang(王喜), James B Kuo
中国物理B . 2018, (
4
): 48502 -048502 . DOI: 10.1088/1674-1056/27/4/048502