中国物理B ›› 2017, Vol. 26 ›› Issue (8): 87304-087304.doi: 10.1088/1674-1056/26/8/087304
• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇 下一篇
Yanrong Wang(王艳蓉), Hong Yang(杨红), Hao Xu(徐昊), Weichun Luo(罗维春), Luwei Qi(祁路伟), Shuxiang Zhang(张淑祥), Wenwu Wang(王文武), Jiang Yan(闫江), Huilong Zhu(朱慧珑), Chao Zhao(赵超), Dapeng Chen(陈大鹏), Tianchun Ye(叶甜春)
Yanrong Wang(王艳蓉)1,2,3, Hong Yang(杨红)1,3, Hao Xu(徐昊)1,3, Weichun Luo(罗维春)1,3, Luwei Qi(祁路伟)1,3, Shuxiang Zhang(张淑祥)1,3, Wenwu Wang(王文武)1,3, Jiang Yan(闫江)2, Huilong Zhu(朱慧珑)1,3, Chao Zhao(赵超)1,3, Dapeng Chen(陈大鹏)1,3, Tianchun Ye(叶甜春)1,3
摘要:
In the process of high-k films fabrication, a novel multi deposition multi annealing (MDMA) technique is introduced to replace simple post deposition annealing. The leakage current decreases with the increase of the post deposition annealing (PDA) times. The equivalent oxide thickness (EOT) decreases when the annealing time(s) change from 1 to 2. Furthermore, the characteristics of SILC (stress-induced leakage current) for an ultra-thin SiO2/HfO2 gate dielectric stack are studied systematically. The increase of the PDA time(s) from 1 to 2 can decrease the defect and defect generation rate in the HK layer. However, increasing the PDA times to 4 and 7 may introduce too much oxygen, therefore the type of oxygen vacancy changes.
中图分类号: (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))