中国物理B ›› 2022, Vol. 31 ›› Issue (1): 18502-018502.doi: 10.1088/1674-1056/ac05b2

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Heterogeneous integration of InP HEMTs on quartz wafer using BCB bonding technology

Yan-Fu Wang(王彦富)1,2, Bo Wang(王博)2,3, Rui-Ze Feng(封瑞泽)1,2, Zhi-Hang Tong(童志航)1,2, Tong Liu(刘桐)2, Peng Ding(丁芃)1,2,†, Yong-Bo Su(苏永波)1,2, Jing-Tao Zhou(周静涛)1,2, Feng Yang(杨枫)2, Wu-Chang Ding(丁武昌)1,2, and Zhi Jin(金智)1,2,‡   

  1. 1 University of Chinese Academic of Sciences, Beijing 100029, China;
    2 High-Frequency High-Voltage Device and Integrated Circuits Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;
    3 Guangxi Key Laboratory of Precision Navigation Technology and Application, Guilin University of Electronic Technology, Guilin 541004, China
  • 收稿日期:2021-02-10 修回日期:2021-05-21 接受日期:2021-05-27 出版日期:2021-12-03 发布日期:2021-12-28
  • 通讯作者: Peng Ding, Zhi Jin E-mail:dingpeng@ime.ac.cn;jinzhi@ime.ac.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 61434006). The authors would like to thank Li Yan-Kui for his assistance during the measurements. We are also grateful to all the members of HighFrequency High-Voltage Device and Integrated Circuits Center for their valuable help during the experiment.

Heterogeneous integration of InP HEMTs on quartz wafer using BCB bonding technology

Yan-Fu Wang(王彦富)1,2, Bo Wang(王博)2,3, Rui-Ze Feng(封瑞泽)1,2, Zhi-Hang Tong(童志航)1,2, Tong Liu(刘桐)2, Peng Ding(丁芃)1,2,†, Yong-Bo Su(苏永波)1,2, Jing-Tao Zhou(周静涛)1,2, Feng Yang(杨枫)2, Wu-Chang Ding(丁武昌)1,2, and Zhi Jin(金智)1,2,‡   

  1. 1 University of Chinese Academic of Sciences, Beijing 100029, China;
    2 High-Frequency High-Voltage Device and Integrated Circuits Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;
    3 Guangxi Key Laboratory of Precision Navigation Technology and Application, Guilin University of Electronic Technology, Guilin 541004, China
  • Received:2021-02-10 Revised:2021-05-21 Accepted:2021-05-27 Online:2021-12-03 Published:2021-12-28
  • Contact: Peng Ding, Zhi Jin E-mail:dingpeng@ime.ac.cn;jinzhi@ime.ac.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 61434006). The authors would like to thank Li Yan-Kui for his assistance during the measurements. We are also grateful to all the members of HighFrequency High-Voltage Device and Integrated Circuits Center for their valuable help during the experiment.

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摘要： Heterogeneous integrated InP high electron mobility transistors (HEMTs) on quartz wafers are fabricated successfully by using a reverse-grown InP epitaxial structure and benzocyclobutene (BCB) bonding technology. The channel of the new device is In0.7Ga0.3As, and the gate length is 100 nm. A maximum extrinsic transconductance gm,max of 855.5 mS/mm and a maximum drain current of 536.5 mA/mm are obtained. The current gain cutoff frequency is as high as 262 GHz and the maximum oscillation frequency reaches 288 GHz. In addition, a small signal equivalent circuit model of heterogeneous integration of InP HEMTs on quartz wafer is built to characterize device performance.

关键词: heterogeneous integration, InP high electron mobility transistor, quartz, small-signal model

Abstract: Heterogeneous integrated InP high electron mobility transistors (HEMTs) on quartz wafers are fabricated successfully by using a reverse-grown InP epitaxial structure and benzocyclobutene (BCB) bonding technology. The channel of the new device is In0.7Ga0.3As, and the gate length is 100 nm. A maximum extrinsic transconductance gm,max of 855.5 mS/mm and a maximum drain current of 536.5 mA/mm are obtained. The current gain cutoff frequency is as high as 262 GHz and the maximum oscillation frequency reaches 288 GHz. In addition, a small signal equivalent circuit model of heterogeneous integration of InP HEMTs on quartz wafer is built to characterize device performance.

Key words: heterogeneous integration, InP high electron mobility transistor, quartz, small-signal model

中图分类号:  (Field effect devices)

  • 85.30.Tv
73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator)) 85.30.-z (Semiconductor devices)