Fluorine-plasma treated AlGaN/GaN high electronic mobility transistors under off-state overdrive stress

doi:10.1088/1674-1056/ac81a7

中国物理B ›› 2022, Vol. 31 ›› Issue (11): 117301-117301.doi: 10.1088/1674-1056/ac81a7

Fluorine-plasma treated AlGaN/GaN high electronic mobility transistors under off-state overdrive stress

Dongyan Zhao(赵东艳)¹, Yubo Wang(王于波)¹, Yanning Chen(陈燕宁)^1,2, Jin Shao(邵瑾)¹, Zhen Fu(付振)², Fang Liu(刘芳)², Yanrong Cao(曹艳荣)^3,4,†, Faqiang Zhao(赵法强)¹, Mingchen Zhong(钟明琛)², Yasong Zhang(张亚松)^3,‡, Maodan Ma(马毛旦)³, Hanghang Lv(吕航航)³, Zhiheng Wang(王志恒)³, Ling Lv(吕玲)⁴, Xuefeng Zheng(郑雪峰)⁴, and Xiaohua Ma(马晓华)⁴

1 Beijing Engineering Research Center of High-reliability IC with Power Industrial Grade, Beijing Smart-Chip Microelectronics Technology Co., Ltd., Beijing 100192, China;
2 Beijing Chip Identification Technology Co., Ltd., Beijing 102200, China;
3 School of Electro-Mechanical Engineering, Xidian University, Xi'an 710071, China;
4 Key Lab of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China

收稿日期:2022-05-06 修回日期:2022-06-29 接受日期:2022-07-18 出版日期:2022-10-17 发布日期:2022-10-17
通讯作者: Yanrong Cao, Yasong Zhang E-mail:yrcao@mail.xidian.edu.cn;568695351@qq.com
基金资助:
Project supported by the Laboratory Open Fund of Beijing Smart-Chip Microelectronics Technology Co., Ltd and the National Natural Science Foundation of China (Grant Nos. 11690042 and 12035019), the National Major Scientific Research Instrument Projects (Grant No. 61727804), and the Natural Science Foundation of Shaanxi Province, China (Grant No. 2022-JM-386).

Fluorine-plasma treated AlGaN/GaN high electronic mobility transistors under off-state overdrive stress

1 Beijing Engineering Research Center of High-reliability IC with Power Industrial Grade, Beijing Smart-Chip Microelectronics Technology Co., Ltd., Beijing 100192, China;
2 Beijing Chip Identification Technology Co., Ltd., Beijing 102200, China;
3 School of Electro-Mechanical Engineering, Xidian University, Xi'an 710071, China;
4 Key Lab of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China

Received:2022-05-06 Revised:2022-06-29 Accepted:2022-07-18 Online:2022-10-17 Published:2022-10-17
Contact: Yanrong Cao, Yasong Zhang E-mail:yrcao@mail.xidian.edu.cn;568695351@qq.com
Supported by:
Project supported by the Laboratory Open Fund of Beijing Smart-Chip Microelectronics Technology Co., Ltd and the National Natural Science Foundation of China (Grant Nos. 11690042 and 12035019), the National Major Scientific Research Instrument Projects (Grant No. 61727804), and the Natural Science Foundation of Shaanxi Province, China (Grant No. 2022-JM-386).

摘要/Abstract

摘要： Influences of off-state overdrive stress on the fluorine-plasma treated AlGaN/GaN high-electronic mobility transistors (HEMTs) are experimentally investigated. It is observed that the reverse leakage current between the gate and source decreases after the off-state stress, whereas the current between the gate and drain increases. By analyzing those changes of the reverse currents based on the Frenkel-Poole model, we realize that the ionization of fluorine ions occurs during the off-state stress. Furthermore, threshold voltage degradation is also observed after the off-state stress, but the degradations of AlGaN/GaN HEMTs treated with different F-plasma RF powers are different. By comparing the differences between those devices, we find that the F-ions incorporated in the GaN buffer layer play an important role in averting degradation. Lastly, suggestions to obtain a more stable fluorine-plasma treated AlGaN/GaN HEMT are put forwarded.

关键词: AlGaN/GaN HEMT, fluorine plasma treatment, off-state overdrive stress

Abstract: Influences of off-state overdrive stress on the fluorine-plasma treated AlGaN/GaN high-electronic mobility transistors (HEMTs) are experimentally investigated. It is observed that the reverse leakage current between the gate and source decreases after the off-state stress, whereas the current between the gate and drain increases. By analyzing those changes of the reverse currents based on the Frenkel-Poole model, we realize that the ionization of fluorine ions occurs during the off-state stress. Furthermore, threshold voltage degradation is also observed after the off-state stress, but the degradations of AlGaN/GaN HEMTs treated with different F-plasma RF powers are different. By comparing the differences between those devices, we find that the F-ions incorporated in the GaN buffer layer play an important role in averting degradation. Lastly, suggestions to obtain a more stable fluorine-plasma treated AlGaN/GaN HEMT are put forwarded.

Key words: AlGaN/GaN HEMT, fluorine plasma treatment, off-state overdrive stress

中图分类号: (III-V semiconductors)

73.61.Ey

73.40.Kp (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions) 73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

Dongyan Zhao(赵东艳), Yubo Wang(王于波), Yanning Chen(陈燕宁), Jin Shao(邵瑾), Zhen Fu(付振), Fang Liu(刘芳), Yanrong Cao(曹艳荣), Faqiang Zhao(赵法强), Mingchen Zhong(钟明琛), Yasong Zhang(张亚松), Maodan Ma(马毛旦), Hanghang Lv(吕航航), Zhiheng Wang(王志恒), Ling Lv(吕玲), Xuefeng Zheng(郑雪峰), and Xiaohua Ma(马晓华). Fluorine-plasma treated AlGaN/GaN high electronic mobility transistors under off-state overdrive stress[J]. 中国物理B, 2022, 31(11): 117301-117301.

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Fluorine-plasma treated AlGaN/GaN high electronic mobility transistors under off-state overdrive stress

Fluorine-plasma treated AlGaN/GaN high electronic mobility transistors under off-state overdrive stress

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