Stress-induced leakage current characteristics of PMOS fabricated by a new multi-deposition multi-annealing technique with full gate last process
王艳蓉, 杨红, 徐昊, 罗维春, 祁路伟, 张淑祥, 王文武, 闫江, 朱慧珑, 赵超, 陈大鹏, 叶甜春
Stress-induced leakage current characteristics of PMOS fabricated by a new multi-deposition multi-annealing technique with full gate last process
Yanrong Wang(王艳蓉), Hong Yang(杨红), Hao Xu(徐昊), Weichun Luo(罗维春), Luwei Qi(祁路伟), Shuxiang Zhang(张淑祥), Wenwu Wang(王文武), Jiang Yan(闫江), Huilong Zhu(朱慧珑), Chao Zhao(赵超), Dapeng Chen(陈大鹏), Tianchun Ye(叶甜春)
中国物理B
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2017, (8): 87304
-087304
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DOI: 10.1088/1674-1056/26/8/087304