中国物理B ›› 2022, Vol. 31 ›› Issue (1): 17301-017301.doi: 10.1088/1674-1056/ac1410

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Dependence of short channel length on negative/positive bias temperature instability (NBTI/PBTI) for 3D FinFET devices

Ren-Ren Xu(徐忍忍)1,2,3, Qing-Zhu Zhang(张青竹)1,2, Long-Da Zhou(周龙达)1,2,3, Hong Yang(杨红)1,2,3,†, Tian-Yang Gai(盖天洋)1,2,3, Hua-Xiang Yin(殷华湘)1,2,3,‡, and Wen-Wu Wang(王文武)1,2,3   

  1. 1 Integrated Circuit Advanced Process Center(ICAC), Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;
    2 Key Laboratory of Microelectronics Devices&Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;
    3 University of Chinese Academy of Sciences, Beijing 100049, China
  • 收稿日期:2021-05-05 修回日期:2021-07-08 接受日期:2021-07-14 出版日期:2021-12-03 发布日期:2021-12-30
  • 通讯作者: Hong Yang, Hua-Xiang Yin E-mail:yanghong@ime.ac.cn;yinhuaxiang@ime.ac.cn
  • 基金资助:
    Project supported in part by the Science and Technology Program of Beijing Municipal Science and Technology Commission, China (Grant No. Z201100004220001), the National Major Project of Science and Technology of China (Grant No. 2017ZX02315001), and the Opening Project of Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences (Grant Nos. Y9YS05X002 and E0YS01X001).

Dependence of short channel length on negative/positive bias temperature instability (NBTI/PBTI) for 3D FinFET devices

Ren-Ren Xu(徐忍忍)1,2,3, Qing-Zhu Zhang(张青竹)1,2, Long-Da Zhou(周龙达)1,2,3, Hong Yang(杨红)1,2,3,†, Tian-Yang Gai(盖天洋)1,2,3, Hua-Xiang Yin(殷华湘)1,2,3,‡, and Wen-Wu Wang(王文武)1,2,3   

  1. 1 Integrated Circuit Advanced Process Center(ICAC), Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;
    2 Key Laboratory of Microelectronics Devices&Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;
    3 University of Chinese Academy of Sciences, Beijing 100049, China
  • Received:2021-05-05 Revised:2021-07-08 Accepted:2021-07-14 Online:2021-12-03 Published:2021-12-30
  • Contact: Hong Yang, Hua-Xiang Yin E-mail:yanghong@ime.ac.cn;yinhuaxiang@ime.ac.cn
  • Supported by:
    Project supported in part by the Science and Technology Program of Beijing Municipal Science and Technology Commission, China (Grant No. Z201100004220001), the National Major Project of Science and Technology of China (Grant No. 2017ZX02315001), and the Opening Project of Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences (Grant Nos. Y9YS05X002 and E0YS01X001).

摘要: A comprehensive study of the negative and positive bias temperature instability (NBTI/PBTI) of 3D FinFET devices with different small channel lengths is presented. It is found while with the channel lengths shrinking from 100 nm to 30 nm, both the NBTI characteristics of p-FinFET and PBTI characteristics of n-FinFET turn better. Moreover, the channel length dependence on NBTI is more serious than that on PBTI. Through the analysis of the physical mechanism of BTI and the simulation of 3-D stress in the FinFET device, a physical mechanism of the channel length dependence on NBTI/PBTI is proposed. Both extra fluorine passivation in the corner of bulk oxide and stronger channel stress in p-FinFETs with shorter channel length causes less NBTI issue, while the extra nitrogen passivation in the corner of bulk oxide induces less PBTI degradation as the channel length decreasing for n-FinFETs. The mechanism well matches the experimental result and provides one helpful guide for the improvement of reliability issues in the advanced FinFET process.

关键词: bias temperature instability (BTI), channel length, stress, FinFET

Abstract: A comprehensive study of the negative and positive bias temperature instability (NBTI/PBTI) of 3D FinFET devices with different small channel lengths is presented. It is found while with the channel lengths shrinking from 100 nm to 30 nm, both the NBTI characteristics of p-FinFET and PBTI characteristics of n-FinFET turn better. Moreover, the channel length dependence on NBTI is more serious than that on PBTI. Through the analysis of the physical mechanism of BTI and the simulation of 3-D stress in the FinFET device, a physical mechanism of the channel length dependence on NBTI/PBTI is proposed. Both extra fluorine passivation in the corner of bulk oxide and stronger channel stress in p-FinFETs with shorter channel length causes less NBTI issue, while the extra nitrogen passivation in the corner of bulk oxide induces less PBTI degradation as the channel length decreasing for n-FinFETs. The mechanism well matches the experimental result and provides one helpful guide for the improvement of reliability issues in the advanced FinFET process.

Key words: bias temperature instability (BTI), channel length, stress, FinFET

中图分类号:  (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

  • 73.40.Qv
85.30.Tv (Field effect devices)