中国物理B ›› 2022, Vol. 31 ›› Issue (9): 97303-097303.doi: 10.1088/1674-1056/ac615b

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Degradation and breakdown behaviors of SGTs under repetitive unclamped inductive switching avalanche stress

Chenkai Zhu(朱晨凯)1, Linna Zhao(赵琳娜)1,†, Zhuo Yang(杨卓)2, and Xiaofeng Gu(顾晓峰)1,‡   

  1. 1 Engineering Research Center of IoT Technology Applications(Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi 214122, China;
    2 Wuxi NCE Power Company, Ltd., Wuxi 214028, China
  • 收稿日期:2021-12-03 修回日期:2022-03-04 接受日期:2022-03-28 出版日期:2022-08-19 发布日期:2022-09-03
  • 通讯作者: Linna Zhao, Xiaofeng Gu E-mail:xgu@jiangnan.edu.cn;zhaolinna@jiangnan.edu.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 61504049), Jiangsu Province Postdoctoral Science Foundation (Grant No. 2018K057B), and the Fundamental Research Funds for the Central Universities, China (Grant No. JUSRP51510).

Degradation and breakdown behaviors of SGTs under repetitive unclamped inductive switching avalanche stress

Chenkai Zhu(朱晨凯)1, Linna Zhao(赵琳娜)1,†, Zhuo Yang(杨卓)2, and Xiaofeng Gu(顾晓峰)1,‡   

  1. 1 Engineering Research Center of IoT Technology Applications(Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi 214122, China;
    2 Wuxi NCE Power Company, Ltd., Wuxi 214028, China
  • Received:2021-12-03 Revised:2022-03-04 Accepted:2022-03-28 Online:2022-08-19 Published:2022-09-03
  • Contact: Linna Zhao, Xiaofeng Gu E-mail:xgu@jiangnan.edu.cn;zhaolinna@jiangnan.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 61504049), Jiangsu Province Postdoctoral Science Foundation (Grant No. 2018K057B), and the Fundamental Research Funds for the Central Universities, China (Grant No. JUSRP51510).

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摘要： The repetitive unclamped inductive switching (UIS) avalanche stress is conducted to investigate the degradation and breakdown behaviors of conventional shield gate trench MOSFET (C-SGT) and P-ring SGT MOSFETs (P-SGT). It is found that the static and dynamic parameters of both devices show different degrees of degradation. Combining experimental and simulation results, the hot holes trapped into the Si/SiO2 interface and the increase of crystal lattice temperature should be responsible for the degradation and breakdown behaviors. Moreover, under repetitive UIS avalanche stress, the reliability of P-SGT overcomes that of C-SGT, benefitting from the decreasing of the impact ionization rate at bottom of field oxide caused by the existence of P-ring.

关键词: shield gate trench MOSFET, repetitive unclamped inductive switching stress, degradation, static and dynamic parameters

Abstract: The repetitive unclamped inductive switching (UIS) avalanche stress is conducted to investigate the degradation and breakdown behaviors of conventional shield gate trench MOSFET (C-SGT) and P-ring SGT MOSFETs (P-SGT). It is found that the static and dynamic parameters of both devices show different degrees of degradation. Combining experimental and simulation results, the hot holes trapped into the Si/SiO2 interface and the increase of crystal lattice temperature should be responsible for the degradation and breakdown behaviors. Moreover, under repetitive UIS avalanche stress, the reliability of P-SGT overcomes that of C-SGT, benefitting from the decreasing of the impact ionization rate at bottom of field oxide caused by the existence of P-ring.

Key words: shield gate trench MOSFET, repetitive unclamped inductive switching stress, degradation, static and dynamic parameters

中图分类号:  (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

  • 73.40.Qv
85.30.Tv (Field effect devices) 85.30.De (Semiconductor-device characterization, design, and modeling)