中国物理B ›› 2022, Vol. 31 ›› Issue (1): 17304-017304.doi: 10.1088/1674-1056/ac21c4

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Study on a novel vertical enhancement-mode Ga2O3 MOSFET with FINFET structure

Liangliang Guo(郭亮良)1, Yuming Zhang(张玉明)1, Suzhen Luan(栾苏珍)2, Rundi Qiao(乔润迪)1, and Renxu Jia(贾仁需)1,†   

  1. 1 The Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;
    2 Xi'an University of Science and Technology, Xi'an 710000, China
  • 收稿日期:2021-08-11 修回日期:2021-08-20 接受日期:2021-08-27 出版日期:2021-12-03 发布日期:2021-12-30
  • 通讯作者: Renxu Jia E-mail:rxjia@mail.xidian.edu.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61974119, 51602241, and 61834005), the Natural Science Foundation of Shannxi Province, China (Grant No. 2020JM-532), and the Science Foundation of Xi’an University of Science and Technology (Grant No. 2018QDJ036).

Study on a novel vertical enhancement-mode Ga2O3 MOSFET with FINFET structure

Liangliang Guo(郭亮良)1, Yuming Zhang(张玉明)1, Suzhen Luan(栾苏珍)2, Rundi Qiao(乔润迪)1, and Renxu Jia(贾仁需)1,†   

  1. 1 The Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;
    2 Xi'an University of Science and Technology, Xi'an 710000, China
  • Received:2021-08-11 Revised:2021-08-20 Accepted:2021-08-27 Online:2021-12-03 Published:2021-12-30
  • Contact: Renxu Jia E-mail:rxjia@mail.xidian.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61974119, 51602241, and 61834005), the Natural Science Foundation of Shannxi Province, China (Grant No. 2020JM-532), and the Science Foundation of Xi’an University of Science and Technology (Grant No. 2018QDJ036).

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摘要： A novel enhanced mode (E-mode) Ga2O3 metal-oxide-semiconductor field-effect transistor (MOSFET) with vertical FINFET structure is proposed and the characteristics of that device are numerically investigated. It is found that the concentration of the source region and the width coupled with the height of the channel mainly effect the on-state characteristics. The metal material of the gate, the oxide material, the oxide thickness, and the epitaxial layer concentration strongly affect the threshold voltage and the output currents. Enabling an E-mode MOSFET device requires a large work function gate metal and an oxide with large dielectric constant. When the output current density of the device increases, the source concentration, the thickness of the epitaxial layer, and the total width of the device need to be expanded. The threshold voltage decreases with the increase of the width of the channel area under the same gate voltage. It is indicated that a set of optimal parameters of a practical vertical enhancement-mode Ga2O3 MOSFET requires the epitaxial layer concentration, the channel height of the device, the thickness of the source region, and the oxide thickness of the device should be less than 5×1016 cm-3, less than 1.5 μm, between 0.1 μm-0.3 μm and less than 0.08 μm, respectively.

关键词: gallium oxide, E-mode, device simulation, threshold voltage

Abstract: A novel enhanced mode (E-mode) Ga2O3 metal-oxide-semiconductor field-effect transistor (MOSFET) with vertical FINFET structure is proposed and the characteristics of that device are numerically investigated. It is found that the concentration of the source region and the width coupled with the height of the channel mainly effect the on-state characteristics. The metal material of the gate, the oxide material, the oxide thickness, and the epitaxial layer concentration strongly affect the threshold voltage and the output currents. Enabling an E-mode MOSFET device requires a large work function gate metal and an oxide with large dielectric constant. When the output current density of the device increases, the source concentration, the thickness of the epitaxial layer, and the total width of the device need to be expanded. The threshold voltage decreases with the increase of the width of the channel area under the same gate voltage. It is indicated that a set of optimal parameters of a practical vertical enhancement-mode Ga2O3 MOSFET requires the epitaxial layer concentration, the channel height of the device, the thickness of the source region, and the oxide thickness of the device should be less than 5×1016 cm-3, less than 1.5 μm, between 0.1 μm-0.3 μm and less than 0.08 μm, respectively.

Key words: gallium oxide, E-mode, device simulation, threshold voltage

中图分类号:  (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

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