Normally-off AlGaN/GaN heterojunction field-effect transistors with in-situ AlN gate insulator

doi:10.1088/1674-1056/ac7a0e

中国物理B ›› 2022, Vol. 31 ›› Issue (12): 127701-127701.doi: 10.1088/1674-1056/ac7a0e

Normally-off AlGaN/GaN heterojunction field-effect transistors with in-situ AlN gate insulator

Taofei Pu(蒲涛飞)¹, Shuqiang Liu(刘树强)², Xiaobo Li(李小波)³, Ting-Ting Wang(王婷婷)⁴, Jiyao Du(都继瑶)^5,†, Liuan Li(李柳暗)^6,‡, Liang He(何亮)², Xinke Liu(刘新科)³, and Jin-Ping Ao(敖金平)⁴

1 Hanshan Normal University, Chaozhou 521041, China;
2 No.;
5 Electronics Research Institute of the Ministry of Industry and Information Technology, Guangzhou 510610, China;
3 Shenzhen University, Shenzhen 518000, China;
4 School of Microelectronics, Xidian University, Xi'an 710071, China;
5 School of Automation and Electrical Engineering, Shenyang Ligong University, Shenyang 110159, China;
6 Yibin Research Institute, Jilin University, Yibin 644000, China

收稿日期:2021-12-23 修回日期:2022-06-12 接受日期:2022-06-18 出版日期:2022-11-11 发布日期:2022-11-21
通讯作者: Jiyao Du, Liuan Li E-mail:du_jiyao@163.com;liliuan@jlu.edu.cn
基金资助:
Supported by the National Natural Science Foundation of China (Grant No. 61904207), scientific research support foundation for introduced high-level talents of Shenyang Ligong University (Grant No. 1010147000914), and the Natural Science Foundation of Sichuan Province, China (Grant No. 2022NSFSC0886).

Normally-off AlGaN/GaN heterojunction field-effect transistors with in-situ AlN gate insulator

1 Hanshan Normal University, Chaozhou 521041, China;
2 No.;
5 Electronics Research Institute of the Ministry of Industry and Information Technology, Guangzhou 510610, China;
3 Shenzhen University, Shenzhen 518000, China;
4 School of Microelectronics, Xidian University, Xi'an 710071, China;
5 School of Automation and Electrical Engineering, Shenyang Ligong University, Shenyang 110159, China;
6 Yibin Research Institute, Jilin University, Yibin 644000, China

Received:2021-12-23 Revised:2022-06-12 Accepted:2022-06-18 Online:2022-11-11 Published:2022-11-21
Contact: Jiyao Du, Liuan Li E-mail:du_jiyao@163.com;liliuan@jlu.edu.cn
Supported by:
Supported by the National Natural Science Foundation of China (Grant No. 61904207), scientific research support foundation for introduced high-level talents of Shenyang Ligong University (Grant No. 1010147000914), and the Natural Science Foundation of Sichuan Province, China (Grant No. 2022NSFSC0886).

摘要/Abstract

摘要： AlGaN/GaN heterojunction field-effect transistors (HFETs) with p-GaN cap layer are developed for normally-off operation, in which an in-situ grown AlN layer is utilized as the gate insulator. Compared with the SiN_x gate insulator, the AlN/p-GaN interface presents a more obvious energy band bending and a wider depletion region, which helps to positively shift the threshold voltage. In addition, the relatively large conduction band offset of AlN/p-GaN is beneficial to suppress the gate leakage current and enhance the gate breakdown voltage. Owing to the introduction of AlN layer, normally-off p-GaN capped AlGaN/GaN HFET with a threshold voltage of 4 V and a gate swing of 13 V is realized. Furthermore, the field-effect mobility is approximately 1500 cm²·V^-1·s^-1 in the 2DEG channel, implying a good device performance.

关键词: AlGaN/GaN HFET, normally-off, in-situ AlN, metal-insulator-semiconductor

Abstract: AlGaN/GaN heterojunction field-effect transistors (HFETs) with p-GaN cap layer are developed for normally-off operation, in which an in-situ grown AlN layer is utilized as the gate insulator. Compared with the SiN_x gate insulator, the AlN/p-GaN interface presents a more obvious energy band bending and a wider depletion region, which helps to positively shift the threshold voltage. In addition, the relatively large conduction band offset of AlN/p-GaN is beneficial to suppress the gate leakage current and enhance the gate breakdown voltage. Owing to the introduction of AlN layer, normally-off p-GaN capped AlGaN/GaN HFET with a threshold voltage of 4 V and a gate swing of 13 V is realized. Furthermore, the field-effect mobility is approximately 1500 cm²·V^-1·s^-1 in the 2DEG channel, implying a good device performance.

Key words: AlGaN/GaN HFET, normally-off, in-situ AlN, metal-insulator-semiconductor

中图分类号: (Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.)

77.84.Bw

73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator)) 79.60.Jv (Interfaces; heterostructures; nanostructures) 85.30.De (Semiconductor-device characterization, design, and modeling)

Taofei Pu(蒲涛飞), Shuqiang Liu(刘树强), Xiaobo Li(李小波), Ting-Ting Wang(王婷婷), Jiyao Du(都继瑶), Liuan Li(李柳暗), Liang He(何亮), Xinke Liu(刘新科), and Jin-Ping Ao(敖金平). Normally-off AlGaN/GaN heterojunction field-effect transistors with in-situ AlN gate insulator[J]. 中国物理B, 2022, 31(12): 127701-127701.

参考文献

[1] Okita H, Hikita M and Nishio A 2017 IEEE Trans. Electron Devices 64 1026
[2] Kukhtyaeva O B and Egorkin V I 2019 J. Phys.: Conf. Series 1410 012192
[3] Hao R H, Fu K and Yu G H 2016 Appl. Phys. Lett. 109 152106
[4] Niu D, Wang Q, Li Wei, et al. 2020 Jpn. J. Appl. Phys. 59 111001
[5] Zhou Q, Liu L and Zhang A B 2016 IEEE Electron Device Lett. 37 165
[6] Pu T F, Wang X and Huang Q 2019 IEEE Electron Device Lett. 40 185
[7] Pu T F, Huang Q and Zhang T 2018 Superlatt. Microstruct. 120 448
[8] Pu T F, Chen Y and Li X B 2020 J. Phys. D 53 415104
[9] Wang C C, Hua M Y and Chen J T 2020 IEEE Electron Device Lett. 41 545
[10] Jiang H X and Lyu Q F 2021 IEEE Trans. Electron Devices 68 653
[11] Li X D, Hove M V and Zhao M 2017 IEEE Electron Device Lett. 38 918
[12] Tang Z K, Jiang Q M and Lu Y Y 2013 IEEE Electron Device Lett. 34 1373
[13] Han P C, Yan Z Z, Wu C H, et al. 2019 IEEE 31th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
[14] Yu C J, Hsu C W, Wu M C, et al. 2020 IEEE Electron Device Lett. 41 673
[15] He Y L, Zhang F, Liu K, et al. 2021 Chin. Phys. B 31 068501
[16] Lee F, Su L Y and Wang C H 2015 IEEE Electron Device Lett. 36 232
[17] Hwang I J, Kim J and Choi H S 2013 IEEE Electron Device Lett. 34 202
[18] Sugiyama T, Lida D and Iwaya M 2010 Phys. Status Solidi C 7 1980
[19] Jiang H X, Zhu R Q and Lyu Q F 2019 IEEE Electron Device Lett. 40 530
[20] Tang X, Li B K and Moghadam H A 2018 IEEE Electron Device Lett. 39 8
[21] Huang S, Jiang Q, Yang S, et al. 2013 IEEE Electron Device Lett. 34 193
[22] Sugiyama T, lida D, Iwaya M, et al. 2010 Phys. Stat. Solidi C 7 1980
[23] Wu T L, Marcon D, You S, et al. 2015 IEEE Electron Device Lett. 36 1001
[24] Stoffels S, Posthuma N, Decoutere S, et al. 2019 IEEE International Reliability Physics Symposium (IRPS)
[25] Ťapajna M, Hilt O, Bahat-Treidel E, et al. 2016 IEEE Electron Device Lett. 37 385
[26] Stockman A, Masin F, Meneghini M, et al. 2018 IEEE Trans. Electron Devices 65 5365
[27] He J, Wei J, Yang S, et al. 2019 IEEE Trans. Electron Devices 66 3453

Normally-off AlGaN/GaN heterojunction field-effect transistors with in-situ AlN gate insulator

Normally-off AlGaN/GaN heterojunction field-effect transistors with in-situ AlN gate insulator

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