中国物理B ›› 2023, Vol. 32 ›› Issue (3): 37302-037302.doi: 10.1088/1674-1056/aca39c

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Design and research of normally-off β-Ga2O3/4H-SiC heterojunction field effect transistor

Meixia Cheng(程梅霞)1, Suzhen Luan(栾苏珍)1,†, Hailin Wang(王海林)1, and Renxu Jia(贾仁需)2   

  1. 1 The Key Laboratory of Heterogeneous Network Convergence Communication, Xi'an University of Science and Technology, Xi'an 710600, China;
    2 The Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China
  • 收稿日期:2022-09-10 修回日期:2022-10-31 接受日期:2022-11-17 出版日期:2023-02-14 发布日期:2023-02-21
  • 通讯作者: Suzhen Luan E-mail:szluan@xust.edu.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61974119 and 61834005).

Design and research of normally-off β-Ga2O3/4H-SiC heterojunction field effect transistor

Meixia Cheng(程梅霞)1, Suzhen Luan(栾苏珍)1,†, Hailin Wang(王海林)1, and Renxu Jia(贾仁需)2   

  1. 1 The Key Laboratory of Heterogeneous Network Convergence Communication, Xi'an University of Science and Technology, Xi'an 710600, China;
    2 The Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China
  • Received:2022-09-10 Revised:2022-10-31 Accepted:2022-11-17 Online:2023-02-14 Published:2023-02-21
  • Contact: Suzhen Luan E-mail:szluan@xust.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61974119 and 61834005).

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摘要： Ga$_{2}$O$_{3}$ is difficult to achieve p-type doping, which further hinders the development of Ga$_{2}$O$_{3}$-based power devices and is not conducive to the development of new devices with high power density and low power consumption. This paper expounds a $\beta $-Ga$_{2}$O$_{3}$/4H-SiC heterojunction lateral metal-oxide-semiconductor field-effect transistor (HJFET), which can make better use of the characteristics of PN junction by adding p-doped SiC in the channel region. Compared with the conventional devices, the threshold voltage of the heterojunction metal-oxide-semiconductor field-effect transistor (MOSFET) is greatly improved, and normally-off operation is realized, showing a positive threshold voltage of 0.82 V. Meanwhile, the off-state breakdown voltage of the device is up to 1817 V, and the maximum transconductance is 15.3 mS/mm. The optimal PFOM is obtained by simulating the thickness, length and doping of the SiC in each region of the epitaxial layer. This structure provides a feasible idea for high performance $\beta $-Ga$_{2}$O$_{3 }$ MOSFET.

关键词: MOSFET, heterojunction, threshold voltage

Abstract: Ga$_{2}$O$_{3}$ is difficult to achieve p-type doping, which further hinders the development of Ga$_{2}$O$_{3}$-based power devices and is not conducive to the development of new devices with high power density and low power consumption. This paper expounds a $\beta $-Ga$_{2}$O$_{3}$/4H-SiC heterojunction lateral metal-oxide-semiconductor field-effect transistor (HJFET), which can make better use of the characteristics of PN junction by adding p-doped SiC in the channel region. Compared with the conventional devices, the threshold voltage of the heterojunction metal-oxide-semiconductor field-effect transistor (MOSFET) is greatly improved, and normally-off operation is realized, showing a positive threshold voltage of 0.82 V. Meanwhile, the off-state breakdown voltage of the device is up to 1817 V, and the maximum transconductance is 15.3 mS/mm. The optimal PFOM is obtained by simulating the thickness, length and doping of the SiC in each region of the epitaxial layer. This structure provides a feasible idea for high performance $\beta $-Ga$_{2}$O$_{3 }$ MOSFET.

Key words: MOSFET, heterojunction, threshold voltage

中图分类号:  (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

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