Thermal stability and data retention of resistive random access memory with HfOx/ZnO double layers

doi:10.1088/1674-1056/26/8/087305

中国物理B ›› 2017, Vol. 26 ›› Issue (8): 87305-087305.doi: 10.1088/1674-1056/26/8/087305

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Thermal stability and data retention of resistive random access memory with HfO_x/ZnO double layers

Yun-Feng Lai(赖云锋), Fan Chen(陈凡), Ze-Cun Zeng(曾泽村), Pei-Jie Lin(林培杰), Shu-Ying Cheng(程树英), Jin-Ling Yu(俞金玲)

School of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China

收稿日期:2017-03-23 修回日期:2017-05-15 出版日期:2017-08-05 发布日期:2017-08-05
通讯作者: Yun-Feng Lai E-mail:yunfeng.lai@fzu.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61006003 and 61674038), the Natural Science Foundation of Fujian Province, China (Grant Nos. 2015J01249 and 2010J05134), the Science Foundation of Fujian Education Department of China (Grant No. JAT160073), and the Science Foundation of Fujian Provincial Economic and Information Technology Commission of China (Grant No. 83016006).

Thermal stability and data retention of resistive random access memory with HfO_x/ZnO double layers

Yun-Feng Lai(赖云锋), Fan Chen(陈凡), Ze-Cun Zeng(曾泽村), Pei-Jie Lin(林培杰), Shu-Ying Cheng(程树英), Jin-Ling Yu(俞金玲)

School of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China

Received:2017-03-23 Revised:2017-05-15 Online:2017-08-05 Published:2017-08-05
Contact: Yun-Feng Lai E-mail:yunfeng.lai@fzu.edu.cn
About author:0.1088/1674-1056/26/8/
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61006003 and 61674038), the Natural Science Foundation of Fujian Province, China (Grant Nos. 2015J01249 and 2010J05134), the Science Foundation of Fujian Education Department of China (Grant No. JAT160073), and the Science Foundation of Fujian Provincial Economic and Information Technology Commission of China (Grant No. 83016006).

摘要/Abstract

摘要：

As an industry accepted storage scheme, hafnium oxide (HfO_x) based resistive random access memory (RRAM) should further improve its thermal stability and data retention for practical applications. We therefore fabricated RRAMs with HfO_x/ZnO double-layer as the storage medium to study their thermal stability as well as data retention. The HfO_x/ZnO double-layer is capable of reversible bipolar switching under ultralow switching current (< 3 μA) with a Schottky emission dominant conduction for the high resistance state and a Poole-Frenkel emission governed conduction for the low resistance state. Compared with a drastically increased switching current at 120 ℃ for the single HfO_x layer RRAM, the HfO_x/ZnO double-layer exhibits excellent thermal stability and maintains neglectful fluctuations in switching current at high temperatures (up to 180 ℃), which might be attributed to the increased Schottky barrier height to suppress current at high temperatures. Additionally, the HfO_x/ZnO double-layer exhibits 10-year data retention @85 ℃ that is helpful for the practical applications in RRAMs.

关键词: resistive random access memory (RRAM), thermal stability, data retention, double layer

Abstract:

Key words: resistive random access memory (RRAM), thermal stability, data retention, double layer

中图分类号: (Metal-insulator-metal structures)

73.40.Rw

77.80.Fm (Switching phenomena) 65.60.+a (Thermal properties of amorphous solids and glasses: heat capacity, thermal expansion, etc.)

赖云锋, 陈凡, 曾泽村, 林培杰, 程树英, 俞金玲. Thermal stability and data retention of resistive random access memory with HfO_x/ZnO double layers[J]. 中国物理B, 2017, 26(8): 87305-087305.

Yun-Feng Lai(赖云锋), Fan Chen(陈凡), Ze-Cun Zeng(曾泽村), Pei-Jie Lin(林培杰), Shu-Ying Cheng(程树英), Jin-Ling Yu(俞金玲). Thermal stability and data retention of resistive random access memory with HfO_x/ZnO double layers[J]. Chin. Phys. B, 2017, 26(8): 87305-087305.

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Thermal stability and data retention of resistive random access memory with HfO_x/ZnO double layers

Thermal stability and data retention of resistive random access memory with HfO_x/ZnO double layers

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