中国物理B ›› 2015, Vol. 24 ›› Issue (2): 28502-028502.doi: 10.1088/1674-1056/24/2/028502

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

One-dimensional breakdown voltage model of SOI RESURF lateral power device based on lateral linearly graded approximation

张珺, 郭宇锋, 徐跃, 林宏, 杨慧, 洪洋, 姚佳飞   

  1. College of Electronic Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210003, China
  • 收稿日期:2014-06-23 修回日期:2014-09-04 出版日期:2015-02-05 发布日期:2015-02-05
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 61076073) and the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20133223110003).

One-dimensional breakdown voltage model of SOI RESURF lateral power device based on lateral linearly graded approximation

Zhang Jun (张珺), Guo Yu-Feng (郭宇锋), Xu Yue (徐跃), Lin Hong (林宏), Yang Hui (杨慧), Hong Yang (洪洋), Yao Jia-Fei (姚佳飞)   

  1. College of Electronic Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210003, China
  • Received:2014-06-23 Revised:2014-09-04 Online:2015-02-05 Published:2015-02-05
  • Contact: Guo Yu-Feng E-mail:yfguo@njupt.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 61076073) and the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20133223110003).

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摘要： A novel one-dimensional (1D) analytical model is proposed for quantifying the breakdown voltage of a reduced surface field (RESURF) lateral power device fabricated on silicon on an insulator (SOI) substrate. We assume that the charges in the depletion region contribute to the lateral PN junctions along the diagonal of the area shared by the lateral and vertical depletion regions. Based on the assumption, the lateral PN junction behaves as a linearly graded junction, thus resulting in a reduced surface electric field and high breakdown voltage. Using the proposed model, the breakdown voltage as a function of device parameters is investigated and compared with the numerical simulation by the TCAD tools. The analytical results are shown to be in fair agreement with the numerical results. Finally, a new RESURF criterion is derived which offers a useful scheme to optimize the structure parameters. This simple 1D model provides a clear physical insight into the RESURF effect and a new explanation on the improvement in breakdown voltage in an SOI RESURF device.

关键词: SOI, RESURF, breakdown voltage, 1D model

Abstract: A novel one-dimensional (1D) analytical model is proposed for quantifying the breakdown voltage of a reduced surface field (RESURF) lateral power device fabricated on silicon on an insulator (SOI) substrate. We assume that the charges in the depletion region contribute to the lateral PN junctions along the diagonal of the area shared by the lateral and vertical depletion regions. Based on the assumption, the lateral PN junction behaves as a linearly graded junction, thus resulting in a reduced surface electric field and high breakdown voltage. Using the proposed model, the breakdown voltage as a function of device parameters is investigated and compared with the numerical simulation by the TCAD tools. The analytical results are shown to be in fair agreement with the numerical results. Finally, a new RESURF criterion is derived which offers a useful scheme to optimize the structure parameters. This simple 1D model provides a clear physical insight into the RESURF effect and a new explanation on the improvement in breakdown voltage in an SOI RESURF device.

Key words: SOI, RESURF, breakdown voltage, 1D model

中图分类号:  (Semiconductor-device characterization, design, and modeling)

  • 85.30.De
85.30.Tv (Field effect devices) 84.70.+p (High-current and high-voltage technology: power systems; power transmission lines and cables)