中国物理B ›› 2020, Vol. 29 ›› Issue (2): 28501-028501.doi: 10.1088/1674-1056/ab5f01

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Effects of buried oxide layer on working speed of SiGe heterojunction photo-transistor

Xian-Cheng Liu(刘先程), Jia-Jun Ma(马佳俊), Hong-Yun Xie(谢红云), Pei Ma(马佩), Liang Chen(陈亮), Min Guo(郭敏), Wan-Rong Zhang(张万荣)   

  1. 1 Faculty of Information Technology, Beijing University of Technology, Beijing 100124, China;
    2 College of Physics and Electronic Engineering, Taishan University, Taian 271000, China
  • 收稿日期:2019-08-21 修回日期:2019-11-21 出版日期:2020-02-05 发布日期:2020-02-05
  • 通讯作者: Hong-Yun Xie E-mail:xiehongyun@bjut.edu.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61604106, 61774012, and 61901010), the Beijing Future Chip Technology High Precision Innovation Center Research Fund, China (Grant No. KYJJ2016008), the Beijing Municipal Natural Science Foundation, China (Grant No. 4192014), and the Municipal Natural Science Foundation of Shangdong Province, China (Grant No. ZR2014FL025).

Effects of buried oxide layer on working speed of SiGe heterojunction photo-transistor

Xian-Cheng Liu(刘先程)1, Jia-Jun Ma(马佳俊)1, Hong-Yun Xie(谢红云)1, Pei Ma(马佩)1, Liang Chen(陈亮)2, Min Guo(郭敏)1, Wan-Rong Zhang(张万荣)1   

  1. 1 Faculty of Information Technology, Beijing University of Technology, Beijing 100124, China;
    2 College of Physics and Electronic Engineering, Taishan University, Taian 271000, China
  • Received:2019-08-21 Revised:2019-11-21 Online:2020-02-05 Published:2020-02-05
  • Contact: Hong-Yun Xie E-mail:xiehongyun@bjut.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61604106, 61774012, and 61901010), the Beijing Future Chip Technology High Precision Innovation Center Research Fund, China (Grant No. KYJJ2016008), the Beijing Municipal Natural Science Foundation, China (Grant No. 4192014), and the Municipal Natural Science Foundation of Shangdong Province, China (Grant No. ZR2014FL025).

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摘要： The effects of buried oxide (BOX) layer on the capacitance of SiGe heterojunction photo-transistor (HPT), including the collector-substrate capacitance, the base-collector capacitance, and the base-emitter capacitance, are studied by using a silicon-on-insulator (SOI) substrate as compared with the devices on native Si substrates. By introducing the BOX layer into Si-based SiGe HPT, the maximum photo-characteristic frequency ft, opt of SOI-based SiGe HPT reaches up to 24.51 GHz, which is 1.5 times higher than the value obtained from Si-based SiGe HPT. In addition, the maximum optical cut-off frequency fβ, opt, namely its 3-dB bandwidth, reaches up to 1.13 GHz, improved by 1.18 times. However, with the increase of optical power or collector current, this improvement on the frequency characteristic from BOX layer becomes less dominant as confirmed by reducing the 3-dB bandwidth of SOI-based SiGe HPT which approaches to the 3-dB bandwidth of Si-based SiGe HPT at higher injection conditions.

关键词: silicon-on-insulator (SOI), SiGe heterojunction photo-transistor (HPT), characteristic frequency, 3-dB bandwidth

Abstract: The effects of buried oxide (BOX) layer on the capacitance of SiGe heterojunction photo-transistor (HPT), including the collector-substrate capacitance, the base-collector capacitance, and the base-emitter capacitance, are studied by using a silicon-on-insulator (SOI) substrate as compared with the devices on native Si substrates. By introducing the BOX layer into Si-based SiGe HPT, the maximum photo-characteristic frequency ft, opt of SOI-based SiGe HPT reaches up to 24.51 GHz, which is 1.5 times higher than the value obtained from Si-based SiGe HPT. In addition, the maximum optical cut-off frequency fβ, opt, namely its 3-dB bandwidth, reaches up to 1.13 GHz, improved by 1.18 times. However, with the increase of optical power or collector current, this improvement on the frequency characteristic from BOX layer becomes less dominant as confirmed by reducing the 3-dB bandwidth of SOI-based SiGe HPT which approaches to the 3-dB bandwidth of Si-based SiGe HPT at higher injection conditions.

Key words: silicon-on-insulator (SOI), SiGe heterojunction photo-transistor (HPT), characteristic frequency, 3-dB bandwidth

中图分类号:  (Photodetectors (including infrared and CCD detectors))

  • 85.60.Gz
85.60.Bt (Optoelectronic device characterization, design, and modeling) 78.66.Nk (Insulators) 73.40.Lq (Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)