中国物理B ›› 2014, Vol. 23 ›› Issue (11): 114402-114402.doi: 10.1088/1674-1056/23/11/114402
• ELECTROMAGNETISM, OPTICS, ACOUSTICS, HEAT TRANSFER, CLASSICAL MECHANICS, AND FLUID DYNAMICS • 上一篇 下一篇
付强a b, 张万荣a, 金冬月a, 丁春宝a, 赵彦晓a, 鲁东a
Fu Qiang (付强)a b, Zhang Wan-Rong (张万荣)a, Jin Dong-Yue (金冬月)a, Ding Chun-Bao (丁春宝)a, Zhao Yan-Xiao (赵彦晓)a, Lu Dong (鲁东)a
摘要:
As is well known, there exists a tradeoff between the breakdown voltage BV CEO and the cut-off frequency fT for a standard heterojunction bipolar transistor (HBT). In this paper, this tradeoff is alleviated by collector doping engineering in the SiGe HBT by utilizing a novel composite of P+ and N- doping layers inside the collector-base (CB) space-charge region (SCR). Compared with the single N-type collector, the introduction of the thin P+ layers provides a reverse electric field weakening the electric field near the CB metallurgical junction without changing the field direction, and the thin N- layer further effectively lowers the electric field near the CB metallurgical junction. As a result, the electron temperature near the CB metallurgical junction is lowered, consequently suppressing the impact ionization, thus BVCEO is improved with a slight degradation in fT. The results show that the product of fT× BV CEO is improved from 309.51 GHz·V to 326.35 GHz·V.
中图分类号: (Heat conduction)