Collector optimization for tradeoff between breakdown voltage and cut-off frequency in SiGe HBT

doi:10.1088/1674-1056/23/11/114402

中国物理B ›› 2014, Vol. 23 ›› Issue (11): 114402-114402.doi: 10.1088/1674-1056/23/11/114402

• ELECTROMAGNETISM, OPTICS, ACOUSTICS, HEAT TRANSFER, CLASSICAL MECHANICS, AND FLUID DYNAMICS • 上一篇下一篇

Collector optimization for tradeoff between breakdown voltage and cut-off frequency in SiGe HBT

付强^{a b}, 张万荣^a, 金冬月^a, 丁春宝^a, 赵彦晓^a, 鲁东^a

a College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China;
b College of Physics, Liaoning University, Shenyang 110036, China

收稿日期:2013-10-22 修回日期:2014-04-08 出版日期:2014-11-15 发布日期:2014-11-15
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 60776051, 61006059, and 61006044), the Beijing Municipal Natural Science Foundation, China (Grant Nos. 4142007, 4143059, 4082007, and 4122014), and the Beijing Municipal Education Committee, China (Grant Nos. KM200710005015 and KM200910005001).

Collector optimization for tradeoff between breakdown voltage and cut-off frequency in SiGe HBT

Fu Qiang (付强)^{a b}, Zhang Wan-Rong (张万荣)^a, Jin Dong-Yue (金冬月)^a, Ding Chun-Bao (丁春宝)^a, Zhao Yan-Xiao (赵彦晓)^a, Lu Dong (鲁东)^a

a College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China;
b College of Physics, Liaoning University, Shenyang 110036, China

Received:2013-10-22 Revised:2014-04-08 Online:2014-11-15 Published:2014-11-15
Contact: Fu Qiang E-mail:duduffqq@sohu.com
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 60776051, 61006059, and 61006044), the Beijing Municipal Natural Science Foundation, China (Grant Nos. 4142007, 4143059, 4082007, and 4122014), and the Beijing Municipal Education Committee, China (Grant Nos. KM200710005015 and KM200910005001).

摘要/Abstract

摘要：

As is well known, there exists a tradeoff between the breakdown voltage BV_CEO and the cut-off frequency f_T for a standard heterojunction bipolar transistor (HBT). In this paper, this tradeoff is alleviated by collector doping engineering in the SiGe HBT by utilizing a novel composite of P⁺ and N^- doping layers inside the collector-base (CB) space-charge region (SCR). Compared with the single N-type collector, the introduction of the thin P⁺ layers provides a reverse electric field weakening the electric field near the CB metallurgical junction without changing the field direction, and the thin N^- layer further effectively lowers the electric field near the CB metallurgical junction. As a result, the electron temperature near the CB metallurgical junction is lowered, consequently suppressing the impact ionization, thus BV_CEO is improved with a slight degradation in f_T. The results show that the product of f_T× BV_CEO is improved from 309.51 GHz·V to 326.35 GHz·V.

关键词: SiGe heterojunction bipolar transistors (HBTs), breakdown voltage, cut-off frequency, collector optimization

Abstract:

Key words: SiGe heterojunction bipolar transistors (HBTs), breakdown voltage, cut-off frequency, collector optimization

中图分类号: (Heat conduction)

44.10.+i

72.20.Pa (Thermoelectric and thermomagnetic effects) 85.30.De (Semiconductor-device characterization, design, and modeling)

付强, 张万荣, 金冬月, 丁春宝, 赵彦晓, 鲁东. Collector optimization for tradeoff between breakdown voltage and cut-off frequency in SiGe HBT[J]. 中国物理B, 2014, 23(11): 114402-114402.

Fu Qiang (付强), Zhang Wan-Rong (张万荣), Jin Dong-Yue (金冬月), Ding Chun-Bao (丁春宝), Zhao Yan-Xiao (赵彦晓), Lu Dong (鲁东). Collector optimization for tradeoff between breakdown voltage and cut-off frequency in SiGe HBT[J]. Chin. Phys. B, 2014, 23(11): 114402-114402.

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Collector optimization for tradeoff between breakdown voltage and cut-off frequency in SiGe HBT

Collector optimization for tradeoff between breakdown voltage and cut-off frequency in SiGe HBT

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