中国物理B ›› 2010, Vol. 19 ›› Issue (5): 57205-057205.doi: 10.1088/1674-1056/19/5/057205

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The effect of initial discharge conditions on the properties of microcrystalline silicon thin films and solar cells

杨仕娥1, 卢景霄1, 郜小勇1, 谷锦华1, 汪建华2, 陈永生3   

  1. (1)ey Laboratory of Material Physics, Department of Physics, Zhengzhou University, Zhengzhou 450052, China; (2)Institute of Plasma Physics, Chinese Academy of Sciences, Hefei 230031, China;Department of Materials Science and Engineering, Wuhan Institute of Technology, Wuhan 430073, China; (3)Key Laboratory of Material Physics, Department of Physics, Zhengzhou University, Zhengzhou 450052, China;Institute of Plasma Physics, Chinese Academy of Sciences, Hefei 230031, China
  • 收稿日期:2008-12-13 修回日期:2009-11-03 出版日期:2010-05-15 发布日期:2010-05-15
  • 基金资助:
    Project supported by the State Key Development Program for Basic Research of China (Grant No.~2006CB202601).

The effect of initial discharge conditions on the properties of microcrystalline silicon thin films and solar cells

Chen Yong-Sheng(陈永生)a)b), Yang Shi-E(杨仕娥)a), Wang Jian-Hua(汪建华)b)c), Lu Jing-Xiao(卢景霄)a),Gao Xiao-Yong(郜小勇)a), and Gu Jin-Hua(谷锦华) a)†   

  1. a Key Laboratory of Material Physics, Department of Physics, Zhengzhou University, Zhengzhou 450052, China; b Institute of Plasma Physics, Chinese Academy of Sciences, Hefei 230031, China; c Department of Materials Science and Engineering, Wuhan Institute of Technology, Wuhan 430073, China
  • Received:2008-12-13 Revised:2009-11-03 Online:2010-05-15 Published:2010-05-15
  • Supported by:
    Project supported by the State Key Development Program for Basic Research of China (Grant No.~2006CB202601).

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摘要： This paper studies the effects of silane back diffusion in the initial plasma ignition stage on the properties of microcrystalline silicon ($\mu $c-Si:H) films by Raman spectroscopy and spectroscopic ellipsometry, through delaying the injection of SiH$_{4}$ gas to the reactor before plasma ignition. By comparing with standard discharge condition, delayed SiH$_{4}$ gas condition could prevent the back diffusion of SiH$_{4}$ from the reactor to the deposition region effectively, which induced the formation of a thick amorphous incubation layer in the interface between bulk film and glass substrate. Applying this method, it obtains the improvement of spectral response in the middle and long wavelength region by combining this method with solar cell fabrication. Finally, results are explained by modifying zero-order analytical model, and a good agreement is found between model and experiments concerning the optimum delayed injection time.

Abstract: This paper studies the effects of silane back diffusion in the initial plasma ignition stage on the properties of microcrystalline silicon ($\mu $c-Si:H) films by Raman spectroscopy and spectroscopic ellipsometry, through delaying the injection of SiH$_{4}$ gas to the reactor before plasma ignition. By comparing with standard discharge condition, delayed SiH$_{4}$ gas condition could prevent the back diffusion of SiH$_{4}$ from the reactor to the deposition region effectively, which induced the formation of a thick amorphous incubation layer in the interface between bulk film and glass substrate. Applying this method, it obtains the improvement of spectral response in the middle and long wavelength region by combining this method with solar cell fabrication. Finally, results are explained by modifying zero-order analytical model, and a good agreement is found between model and experiments concerning the optimum delayed injection time.

Key words: back diffusion, microcrystalline silicon, thin film, Raman crystallinity

中图分类号:  (Elemental semiconductors and insulators)

  • 78.30.Am
84.60.Jt (Photoelectric conversion) 52.77.Dq (Plasma-based ion implantation and deposition) 66.30.H- (Self-diffusion and ionic conduction in nonmetals) 81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)) 68.55.-a (Thin film structure and morphology)