中国物理B ›› 2007, Vol. 16 ›› Issue (3): 848-853.doi: 10.1088/1009-1963/16/3/049

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Characterization of doped hydrogenated nanocrystalline silicon films prepared by plasma enhanced chemical vapour deposition

王金良, 毋二省   

  1. Department of Physics, School of Science, Beihang University, Beijing 100083, China
  • 收稿日期:2006-02-13 修回日期:2006-09-15 出版日期:2007-03-20 发布日期:2007-03-20
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No 10432050).

Characterization of doped hydrogenated nanocrystalline silicon films prepared by plasma enhanced chemical vapour deposition

Wang Jin-Liang(王金良) and Wu Er-Xing(毋二省)   

  1. Department of Physics, School of Science, Beihang University, Beijing 100083, China
  • Received:2006-02-13 Revised:2006-09-15 Online:2007-03-20 Published:2007-03-20
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No 10432050).

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摘要： The B- and P-doped hydrogenated nanocrystalline silicon films (nc-Si\jz{0.2ex}{:}H) are prepared by plasma-enhanced chemical vapour deposition (PECVD). The microstructures of doped nc-Si\jz{0.2ex}{:}H films are carefully and systematically characterized by using high resolution electron microscopy (HREM), Raman scattering, x-ray diffraction (XRD), Auger electron spectroscopy (AES), and resonant nucleus reaction (RNR). The results show that as the doping concentration of PH3 increases, the average grain size (d) tends to decrease and the crystalline volume percentage (Xc) increases simultaneously. For the B-doped samples, as the doping concentration of B2H\xj{6} increases, no obvious change in the value of d is observed, but the value of Xc is found to decrease. This is especially apparent in the case of heavy B2H2 doped samples, where the films change from nanocrystalline to amorphous.

关键词: PECVD, doped hydrogenated nanocrystalline silicon film, microstructure

Abstract: The B- and P-doped hydrogenated nanocrystalline silicon films (nc-Si:H) are prepared by plasma-enhanced chemical vapour deposition (PECVD). The microstructures of doped nc-Si:H films are carefully and systematically characterized by using high resolution electron microscopy (HREM), Raman scattering, x-ray diffraction (XRD), Auger electron spectroscopy (AES), and resonant nucleus reaction (RNR). The results show that as the doping concentration of PH3 increases, the average grain size (d) tends to decrease and the crystalline volume percentage (Xc) increases simultaneously. For the B-doped samples, as the doping concentration of B2H6 increases, no obvious change in the value of d is observed, but the value of Xc is found to decrease. This is especially apparent in the case of heavy B2H2 doped samples, where the films change from nanocrystalline to amorphous.

Key words: PECVD, doped hydrogenated nanocrystalline silicon film, microstructure

中图分类号:  (Nanocrystals)

  • 61.46.Hk
61.05.cp (X-ray diffraction) 68.55.-a (Thin film structure and morphology) 78.30.Am (Elemental semiconductors and insulators) 79.20.Fv (Electron impact: Auger emission) 81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))