The study of amorphous incubation layers during the growth of microcrystalline silicon films under different deposition conditions

doi:10.1088/1674-1056/19/8/087206

中国物理B ›› 2010, Vol. 19 ›› Issue (8): 87206-087206.doi: 10.1088/1674-1056/19/8/087206

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

The study of amorphous incubation layers during the growth of microcrystalline silicon films under different deposition conditions

陈永生, 徐艳华, 谷锦华, 卢景霄, 杨仕娥, 郜小勇

Key Laboratory of Material Physics, Department of Physics, Zhengzhou University, Zhengzhou 450052, China

收稿日期:2010-01-08 修回日期:2010-02-24 出版日期:2010-08-15 发布日期:2010-08-15
基金资助:
Project supported by the State Key Development Program for Basic Research of China (Grant No. 2006CB202601) and the Natural Science Research Program of the Education Bureau of Henan Province of China (Grant No. 2009A140007).

The study of amorphous incubation layers during the growth of microcrystalline silicon films under different deposition conditions

Chen Yong-Sheng(陈永生)^†, Xu Yan-Hua(徐艳华), Gu Jin-Hua(谷锦华), Lu Jing-Xiao(卢景霄), Yang Shi-E(杨仕娥), and Gao Xiao-Yong(郜小勇)

Key Laboratory of Material Physics, Department of Physics, Zhengzhou University, Zhengzhou 450052, China

Received:2010-01-08 Revised:2010-02-24 Online:2010-08-15 Published:2010-08-15
Supported by:
Project supported by the State Key Development Program for Basic Research of China (Grant No. 2006CB202601) and the Natural Science Research Program of the Education Bureau of Henan Province of China (Grant No. 2009A140007).

摘要/Abstract

摘要： The structural un-uniformity of μc-Si:H films prepared using a very high frequency plasma-enhanced chemical vapour deposition method has been investigated by Raman spectroscopy, spectroscopic ellipsometer and atomic force microscopy. It was found that the formation of amorphous incubation layer was caused by the back diffusion of SiH₄ and the amorphous induction of glass surface during the initial ignition process, and growth of the incubation layer can be suppressed and uniform μc-Si:H phase is generated by the application of delayed initial SiH₄ density and silane profiling methods.

Abstract: The structural un-uniformity of μc-Si:H films prepared using a very high frequency plasma-enhanced chemical vapour deposition method has been investigated by Raman spectroscopy, spectroscopic ellipsometer and atomic force microscopy. It was found that the formation of amorphous incubation layer was caused by the back diffusion of SiH₄ and the amorphous induction of glass surface during the initial ignition process, and growth of the incubation layer can be suppressed and uniform μc-Si:H phase is generated by the application of delayed initial SiH₄ density and silane profiling methods.

Key words: microcrystalline silicon, thin film, amorphous incubation layer

中图分类号: (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))

81.15.Gh

52.77.Dq (Plasma-based ion implantation and deposition) 68.55.-a (Thin film structure and morphology) 68.55.A- (Nucleation and growth) 78.30.Am (Elemental semiconductors and insulators) 78.66.Db (Elemental semiconductors and insulators)

陈永生, 徐艳华, 谷锦华, 卢景霄, 杨仕娥, 郜小勇. The study of amorphous incubation layers during the growth of microcrystalline silicon films under different deposition conditions[J]. 中国物理B, 2010, 19(8): 87206-087206.

Chen Yong-Sheng(陈永生), Xu Yan-Hua(徐艳华), Gu Jin-Hua(谷锦华), Lu Jing-Xiao(卢景霄), Yang Shi-E(杨仕娥), and Gao Xiao-Yong(郜小勇). The study of amorphous incubation layers during the growth of microcrystalline silicon films under different deposition conditions[J]. Chin. Phys. B, 2010, 19(8): 87206-087206.

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The study of amorphous incubation layers during the growth of microcrystalline silicon films under different deposition conditions

The study of amorphous incubation layers during the growth of microcrystalline silicon films under different deposition conditions

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