中国物理B ›› 2009, Vol. 18 ›› Issue (10): 4558-4563.doi: 10.1088/1674-1056/18/10/077

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Research on the boron contamination at the p/i interface of microcrystalline silicon solar cells deposited in a single PECVD chamber

孙福和, 魏长春, 孙建, 张德坤, 耿新华, 熊绍珍, 赵颖   

  1. Institute of Photo-Electronics, Thin Film Devices and Technique of Nankai University, Key Laboratory of Photo-Electronics, Thin Film Devices and Technique of Tianjin, Key Laboratory of Photo-Electronic Information Science and Technology (Nankai Universi
  • 收稿日期:2009-01-14 修回日期:2009-02-03 出版日期:2009-10-20 发布日期:2009-10-20
  • 基金资助:
    Project supported by Hi-Tech Research and Development Program of China (Grant No 2007AA05Z436), Science and Technology Support Project of Tianjin (Grant No 08ZCKFGX03500), National Basic Research Program of China (Grant Nos 2006CB202602 and 2006CB202603),

Research on the boron contamination at the p/i interface of microcrystalline silicon solar cells deposited in a single PECVD chamber

Zhang Xiao-Dan(张晓丹)†, Sun Fu-He(孙福和), Wei Chang-Chun(魏长春), Sun Jian(孙建), Zhang De-Kun(张德坤), Geng Xin-Hua(耿新华), Xiong Shao-Zhen(熊绍珍), and Zhao Ying(赵颖)   

  1. Institute of Photo-Electronics, Thin Film Devices and Technique of Nankai University, Key Laboratory of Photo-Electronics,
    Thin Film Devices and Technique of Tianjin, Key Laboratory of Photo-Electronic Information Science and Technology  (Nankai University), Ministry of Education, Tianjin 300071, China
  • Received:2009-01-14 Revised:2009-02-03 Online:2009-10-20 Published:2009-10-20
  • Supported by:
    Project supported by Hi-Tech Research and Development Program of China (Grant No 2007AA05Z436), Science and Technology Support Project of Tianjin (Grant No 08ZCKFGX03500), National Basic Research Program of China (Grant Nos 2006CB202602 and 2006CB202603),

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摘要： This paper studies boron contamination at the interface between the p and i layers of μ c-Si:H solar cells deposited in a single-chamber PECVD system. The boron depth profile in the i layer was measured by Secondary Ion Mass Spectroscopy. It is found that the mixed-phase μ c-Si:H materials with 40% crystalline volume fraction is easy to be affected by the residual boron in the reactor. The experimental results showed that a 500-nm thick μ c-Si:H covering layer or a 30-seconds of hydrogen plasma treatment can effectively reduce the boron contamination at the p/i interface. However, from viewpoint of cost reduction, the hydrogen plasma treatment is desirable for solar cell manufacture because the substrate is not moved during the hydrogen plasma treatment.

Abstract: This paper studies boron contamination at the interface between the p and i layers of μc-Si:H solar cells deposited in a single-chamber PECVD system. The boron depth profile in the i layer was measured by Secondary Ion Mass Spectroscopy. It is found that the mixed-phase μc-Si:H materials with 40% crystalline volume fraction is easy to be affected by the residual boron in the reactor. The experimental results showed that a 500-nm thick μc-Si:H covering layer or a 30-seconds of hydrogen plasma treatment can effectively reduce the boron contamination at the p/i interface. However, from viewpoint of cost reduction, the hydrogen plasma treatment is desirable for solar cell manufacture because the substrate is not moved during the hydrogen plasma treatment.

Key words: boron contamination, single chamber, microcrystalline silicon, solar cells

中图分类号:  (Photoelectric conversion)

  • 84.60.Jt
52.77.Dq (Plasma-based ion implantation and deposition) 61.72.uf (Ge and Si) 78.30.Am (Elemental semiconductors and insulators) 79.20.Rf (Atomic, molecular, and ion beam impact and interactions with surfaces) 81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))