中国物理B ›› 2009, Vol. 18 ›› Issue (10): 4558-4563.doi: 10.1088/1674-1056/18/10/077
孙福和, 魏长春, 孙建, 张德坤, 耿新华, 熊绍珍, 赵颖
Zhang Xiao-Dan(张晓丹)†, Sun Fu-He(孙福和), Wei Chang-Chun(魏长春), Sun Jian(孙建), Zhang De-Kun(张德坤), Geng Xin-Hua(耿新华), Xiong Shao-Zhen(熊绍珍), and Zhao Ying(赵颖)
摘要: This paper studies boron contamination at the interface between the p and i layers of μ c-Si:H solar cells deposited in a single-chamber PECVD system. The boron depth profile in the i layer was measured by Secondary Ion Mass Spectroscopy. It is found that the mixed-phase μ c-Si:H materials with 40% crystalline volume fraction is easy to be affected by the residual boron in the reactor. The experimental results showed that a 500-nm thick μ c-Si:H covering layer or a 30-seconds of hydrogen plasma treatment can effectively reduce the boron contamination at the p/i interface. However, from viewpoint of cost reduction, the hydrogen plasma treatment is desirable for solar cell manufacture because the substrate is not moved during the hydrogen plasma treatment.
中图分类号: (Photoelectric conversion)