中国物理B ›› 2009, Vol. 18 ›› Issue (8): 3563-3567.doi: 10.1088/1674-1056/18/8/071
韩晓艳, 侯国付, 张晓丹, 魏长春, 李贵君, 张德坤, 陈新亮, 孙健, 张建军, 赵颖, 耿新华
Han Xiao-Yan(韩晓艳), Hou Guo-Fu(侯国付)†, Zhang Xiao-Dan(张晓丹), Wei Chang-Chun(魏长春), Li Gui-Jun(李贵君), Zhang De-Kun(张德坤), Chen Xin-Liang(陈新亮), Sun Jian(孙健), Zhang Jian-Jun(张建军), Zhao Ying(赵颖), and Geng Xin-Hua(耿新华)
摘要: This paper reports that high-rate-deposition of microcrystalline silicon solar cells was performed by very-high-frequency plasma-enhanced chemical vapor deposition. These solar cells, whose intrinsic μ c-Si:H layers were prepared by using a different total gas flow rate (Ftotal), behave much differently in performance, although their intrinsic layers have similar crystalline volume fraction, opto-electronic properties and a deposition rate of ~ 1.0~nm/s. The influence of Ftotal on the micro-structural properties was analyzed by Raman and Fourier transformed infrared measurements. The results showed that the vertical uniformity and the compact degree of μ c-Si:H thin films were improved with increasing Ftotal. The variation of the microstructure was regarded as the main reason for the difference of the J--V parameters. Combined with optical emission spectroscopy, we found that the gas temperature plays an important role in determining the microstructure of thin films. With Ftotal of 300~sccm, a conversion efficiency of 8.11% has been obtained for the intrinsic layer deposited at 8.5~\AA/s (1~\AA=0.1\,nm).
中图分类号: (Nucleation and growth)