中国物理B ›› 2009, Vol. 18 ›› Issue (8): 3563-3567.doi: 10.1088/1674-1056/18/8/071

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Influence of the total gas flow rate on high rate growth microcrystalline silicon films and solar cells

韩晓艳, 侯国付, 张晓丹, 魏长春, 李贵君, 张德坤, 陈新亮, 孙健, 张建军, 赵颖, 耿新华   

  1. Institute of Photoelectronics, Thin Film Devices and Technique of Nankai University, Tianjin 300071, China Key Laboratory of Photoelectronics, Thin Film Devices and Technique of Tianjin, Tianjin 300071, China Key Laboratory of Optoelectronic Informatio
  • 收稿日期:2008-08-22 修回日期:2008-11-05 出版日期:2009-08-20 发布日期:2009-08-20
  • 基金资助:
    Project supported by the National Basic Research Program of China (Grant Nos 2006CB202602 and 2006CB202603), the Tianjin Assistant Foundation for the National Basic Research Program of China (Grant No 07QTPTJC29500), and the Natural Science Foundation of Tianjin (Grant No 07JCYBJC04000).

Influence of the total gas flow rate on high rate growth microcrystalline silicon films and solar cells

Han Xiao-Yan(韩晓艳), Hou Guo-Fu(侯国付)†, Zhang Xiao-Dan(张晓丹), Wei Chang-Chun(魏长春), Li Gui-Jun(李贵君), Zhang De-Kun(张德坤), Chen Xin-Liang(陈新亮), Sun Jian(孙健), Zhang Jian-Jun(张建军), Zhao Ying(赵颖), and Geng Xin-Hua(耿新华)   

  1. Institute of Photoelectronics, Thin Film Devices and Technique of Nankai University, Tianjin 300071, China; Key Laboratory of Photoelectronics, Thin Film Devices and Technique of Tianjin, Tianjin 300071, China; Key Laboratory of Optoelectronic Information Science and Technology, Ministry of Education, Tianjin 300071, China
  • Received:2008-08-22 Revised:2008-11-05 Online:2009-08-20 Published:2009-08-20
  • Supported by:
    Project supported by the National Basic Research Program of China (Grant Nos 2006CB202602 and 2006CB202603), the Tianjin Assistant Foundation for the National Basic Research Program of China (Grant No 07QTPTJC29500), and the Natural Science Foundation of Tianjin (Grant No 07JCYBJC04000).

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摘要： This paper reports that high-rate-deposition of microcrystalline silicon solar cells was performed by very-high-frequency plasma-enhanced chemical vapor deposition. These solar cells, whose intrinsic μ c-Si:H layers were prepared by using a different total gas flow rate (Ftotal), behave much differently in performance, although their intrinsic layers have similar crystalline volume fraction, opto-electronic properties and a deposition rate of ～ 1.0~nm/s. The influence of Ftotal on the micro-structural properties was analyzed by Raman and Fourier transformed infrared measurements. The results showed that the vertical uniformity and the compact degree of μ c-Si:H thin films were improved with increasing Ftotal. The variation of the microstructure was regarded as the main reason for the difference of the J--V parameters. Combined with optical emission spectroscopy, we found that the gas temperature plays an important role in determining the microstructure of thin films. With Ftotal of 300~sccm, a conversion efficiency of 8.11% has been obtained for the intrinsic layer deposited at 8.5~\AA/s (1~\AA=0.1\,nm).

Abstract: This paper reports that high-rate-deposition of microcrystalline silicon solar cells was performed by very-high-frequency plasma-enhanced chemical vapor deposition. These solar cells, whose intrinsic μc-Si:H layers were prepared by using a different total gas flow rate (Ftotal), behave much differently in performance, although their intrinsic layers have similar crystalline volume fraction, opto-electronic properties and a deposition rate of ～1.0 nm/s. The influence of Ftotal on the micro-structural properties was analyzed by Raman and Fourier transformed infrared measurements. The results showed that the vertical uniformity and the compact degree of μc-Si:H thin films were improved with increasing Ftotal. The variation of the microstructure was regarded as the main reason for the difference of the J--V parameters. Combined with optical emission spectroscopy, we found that the gas temperature plays an important role in determining the microstructure of thin films. With Ftotal of 300 sccm, a conversion efficiency of 8.11% has been obtained for the intrinsic layer deposited at 8.5 ?/s (1 ?= 0.1 nm).

Key words: microcrystalline silicon, high rate, solar cell, total gas flow rate

中图分类号:  (Nucleation and growth)

  • 68.55.A-
78.30.Am (Elemental semiconductors and insulators) 78.66.Db (Elemental semiconductors and insulators) 81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)) 84.60.Jt (Photoelectric conversion)