中国物理B ›› 2010, Vol. 19 ›› Issue (10): 106106-106106.doi: 10.1088/1674-1056/19/10/106106

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Influence of nitrogen implantation into the buried oxide on the radiation hardness of silicon-on-insulator wafers

张恩霞1, 唐海马2, 郑中山2, 于芳3, 李宁3, 王宁娟3   

  1. (1)College of Material Engineering, Shanghai University of Engineering and Science, Shanghai 201620, China; (2)Department of Physics, University of Jinan, Jinan 250022, China; (3)Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 收稿日期:2010-01-24 修回日期:2010-04-26 出版日期:2010-10-15 发布日期:2010-10-15
  • 基金资助:
    Project supported by the Doctoral Science Foundation of University of Jinan.

Influence of nitrogen implantation into the buried oxide on the radiation hardness of silicon-on-insulator wafers

Tang Hai-Ma(唐海马)a), Zheng Zhong-Shan(郑中山)a)†, Zhang En-Xia(张恩霞)b), Yu Fang(于芳)c), Li Ning(李宁)c), and Wang Ning-Juan(王宁娟)c)   

  1. a Department of Physics, University of Jinan, Jinan 250022, China; b College of Material Engineering, Shanghai University of Engineering and Science, Shanghai 201620, China; c Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • Received:2010-01-24 Revised:2010-04-26 Online:2010-10-15 Published:2010-10-15
  • Supported by:
    Project supported by the Doctoral Science Foundation of University of Jinan.

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摘要： In order to improve the total-dose radiation hardness of the buried oxide of separation by implanted oxygen silicon-on-insulator wafers, nitrogen ions were implanted into the buried oxide with a dose of 1016 cm- 2, and subsequent annealing was performed at 1100 ℃. The effect of annealing time on the radiation hardness of the nitrogen implanted wafers has been studied by the high frequency capacitance-voltage technique. The results suggest that the improvement of the radiation hardness of the wafers can be achieved through a shorter time annealing after nitrogen implantation. The nitrogen-implanted sample with the shortest annealing time 0.5 h shows the highest tolerance to total-dose radiation. In particular, for the 1.0 and 1.5 h annealing samples, both total dose responses were unusual. After 300-krad(Si) irradiation, both the shifts of capacitance--voltage curve reached a maximum, respectively, and then decreased with increasing total dose. In addition, the wafers were analysed by the Fourier transform infrared spectroscopy technique, and some useful results have been obtained.

Abstract: In order to improve the total-dose radiation hardness of the buried oxide of separation by implanted oxygen silicon-on-insulator wafers, nitrogen ions were implanted into the buried oxide with a dose of 1016 cm- 2, and subsequent annealing was performed at 1100 ℃. The effect of annealing time on the radiation hardness of the nitrogen implanted wafers has been studied by the high frequency capacitance-voltage technique. The results suggest that the improvement of the radiation hardness of the wafers can be achieved through a shorter time annealing after nitrogen implantation. The nitrogen-implanted sample with the shortest annealing time 0.5 h shows the highest tolerance to total-dose radiation. In particular, for the 1.0 and 1.5 h annealing samples, both total dose responses were unusual. After 300-krad(Si) irradiation, both the shifts of capacitance--voltage curve reached a maximum, respectively, and then decreased with increasing total dose. In addition, the wafers were analysed by the Fourier transform infrared spectroscopy technique, and some useful results have been obtained.

Key words: silicon-on-insulator wafers, radiation hardness, nitrogen implantation

中图分类号:  (Ion radiation effects)

  • 61.80.Jh
61.82.Ms (Insulators) 73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator)) 78.30.Am (Elemental semiconductors and insulators) 81.40.Gh (Other heat and thermomechanical treatments) 81.40.Wx (Radiation treatment)