中国物理B ›› 2009, Vol. 18 ›› Issue (2): 773-777.doi: 10.1088/1674-1056/18/2/060

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Columnar growth of crystalline silicon films on aluminium-coated glass by inductively coupled plasma CVD at room temperature

王金晓, 秦艳丽, 闫恒庆, 高平奇, 栗军帅, 尹旻, 贺德衍   

  1. Department of Physics, Lanzhou University, Lanzhou 730000, China
  • 收稿日期:2008-07-01 修回日期:2008-07-22 出版日期:2009-02-20 发布日期:2009-02-20

Columnar growth of crystalline silicon films on aluminium-coated glass by inductively coupled plasma CVD at room temperature

Wang Jin-Xiao(王金晓), Qin Yan-Li(秦艳丽), Yan Heng-Qing(闫恒庆), Gao Ping-Qi(高平奇), Li Jun-Shuai(栗军帅), Yin Min(尹旻), and He De-Yan(贺德衍)†   

  1. Department of Physics, Lanzhou University, Lanzhou 730000, China
  • Received:2008-07-01 Revised:2008-07-22 Online:2009-02-20 Published:2009-02-20

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摘要： Silicon films were grown on aluminium-coated glass by inductively coupled plasma CVD at room temperature using a mixture of SiH4 and H2 as the source gas. The microstructure of the films was evaluated using Raman spectroscopy, scanning electron microscopy and atomic force microscopy. It was found that the films are composed of columnar grains and their surfaces show a random and uniform distribution of silicon nanocones. Such a microstructure is highly advantageous to the application of the films in solar cells and electron emission devices. Field electron emission measurement of the films demonstrated that the threshold field strength is as low as ～9.8V/μm and the electron emission characteristic is reproducible. In addition, a mechanism is suggested for the columnar growth of crystalline silicon films on aluminium-coated glass at room temperature.

Abstract: Silicon films were grown on aluminium-coated glass by inductively coupled plasma CVD at room temperature using a mixture of SiH4 and H2 as the source gas. The microstructure of the films was evaluated using Raman spectroscopy, scanning electron microscopy and atomic force microscopy. It was found that the films are composed of columnar grains and their surfaces show a random and uniform distribution of silicon nanocones. Such a microstructure is highly advantageous to the application of the films in solar cells and electron emission devices. Field electron emission measurement of the films demonstrated that the threshold field strength is as low as ～9.8V/μm and the electron emission characteristic is reproducible. In addition, a mechanism is suggested for the columnar growth of crystalline silicon films on aluminium-coated glass at room temperature.

Key words: surface structure, columnar growth, inductively coupled plasma CVD, crystalline silicon films

中图分类号:  (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))

  • 81.15.Gh
52.77.Dq (Plasma-based ion implantation and deposition) 78.30.Am (Elemental semiconductors and insulators) 78.66.Db (Elemental semiconductors and insulators) 79.70.+q (Field emission, ionization, evaporation, and desorption) 68.55.-a (Thin film structure and morphology)