中国物理B ›› 2009, Vol. 18 ›› Issue (1): 293-297.doi: 10.1088/1674-1056/18/1/047

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

The effects of fast neutron irradiation on oxygen in Czochralski silicon

陈贵锋, 阎文博, 陈洪建, 李兴华, 李养贤   

  1. School of Material Science and Engineering, Hebei University of Technology, Tianjin 300130, China
  • 收稿日期:2008-06-11 修回日期:2008-08-10 出版日期:2009-01-20 发布日期:2009-01-20
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No 50872028), the Natural Science Foundation of Hebei Province, China (Grant No E2008000079) and the Specialized Research Fund for the Doctoral Program of Higher Education of Chi

The effects of fast neutron irradiation on oxygen in Czochralski silicon

Chen Gui-Feng(陈贵锋), Yan Wen-Bo(阎文博), Chen Hong-Jian(陈洪建), Li Xing-Hua(李兴华), and Li Yang-Xian(李养贤)†   

  1. School of Material Science and Engineering, Hebei University of Technology, Tianjin 300130, China
  • Received:2008-06-11 Revised:2008-08-10 Online:2009-01-20 Published:2009-01-20
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No 50872028), the Natural Science Foundation of Hebei Province, China (Grant No E2008000079) and the Specialized Research Fund for the Doctoral Program of Higher Education of Chi

PDF (PC)

905

赞

摘要： The effects of fast neutron irradiation on oxygen atoms in Czochralski silicon (CZ-Si) are investigated systemically by using Fourier transform infrared (FTIR) spectrometer and positron annihilation technique (PAT). Through isochronal annealing, it is found that the trend of variation in interstitial oxygen concentration ([Oi]) in fast neutrons irradiated CZ-Si fluctuates largely with temperature increasing, especially between 500 and 700℃. After the CZ-Si is annealed at 600℃, the V4 appearing as three-dimensional vacancy clusters causes the formation of the molecule-like oxygen clusters, and more importantly these dimers with small binding energies (0.1--1.0eV) can diffuse into the Si lattices more easily than single oxygen atoms, thereby leading to the strong oxygen agglomerations. When the CZ-Si is annealed at temperature increasing up to 700℃, three-dimensional vacancy clusters disappear and the oxygen agglomerations decompose into single oxygen atoms (O) at interstitial sites. Results from FTIR spectrometer and PAT provide an insight into the nature of the [Oi] at temperatures between 500 and 700℃. It turns out that the large fluctuation of [Oi] after short-time annealing from 500 to 700℃ results from the transformation of fast neutron irradiation defects.

Abstract: The effects of fast neutron irradiation on oxygen atoms in Czochralski silicon (CZ-Si) are investigated systemically by using Fourier transform infrared (FTIR) spectrometer and positron annihilation technique (PAT). Through isochronal annealing, it is found that the trend of variation in interstitial oxygen concentration ([Oi]) in fast neutrons irradiated CZ-Si fluctuates largely with temperature increasing, especially between 500 and 700℃. After the CZ-Si is annealed at 600℃, the V4 appearing as three-dimensional vacancy clusters causes the formation of the molecule-like oxygen clusters, and more importantly these dimers with small binding energies (0.1--1.0eV) can diffuse into the Si lattices more easily than single oxygen atoms, thereby leading to the strong oxygen agglomerations. When the CZ-Si is annealed at temperature increasing up to 700℃, three-dimensional vacancy clusters disappear and the oxygen agglomerations decompose into single oxygen atoms (O) at interstitial sites. Results from FTIR spectrometer and PAT provide an insight into the nature of the [Oi] at temperatures between 500 and 700℃. It turns out that the large fluctuation of [Oi] after short-time annealing from 500 to 700℃ results from the transformation of fast neutron irradiation defects.

Key words: neutron irradiation, irradiation defects, FTIR spectrometer, positron lifetime

中图分类号:  (Neutron radiation effects)

  • 61.80.Hg
61.72.J- (Point defects and defect clusters) 61.82.Fk (Semiconductors) 78.30.Am (Elemental semiconductors and insulators) 78.70.Bj (Positron annihilation) 81.40.Ef (Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization)