中国物理B ›› 2007, Vol. 16 ›› Issue (3): 795-798.doi: 10.1088/1009-1963/16/3/039
李志刚1, 龙世兵1, 刘明1, 王丛舜1, 贾锐1, 闾锦2, 施毅2
Li Zhi-Gang(李志刚)a), Long Shi-Bing(龙世兵)a), Liu Ming(刘明)a)†, Wang Cong-Shun(王丛舜)a), Jia Rui(贾锐)a), Lv Jin(闾锦)b), and Shi Yi(施毅)b)
摘要: The early stages of hydrogenated nanocrystalline silicon (nc-Si:H) films deposited by plasma-enhanced chemical vapour deposition were characterized by atomic force microscopy. To increase the density of nanocrystals in the nc-Si:H films, the films were annealed by rapid thermal annealing (RTA) at different temperatures and then analysed by Raman spectroscopy. It was found that the recrystallization process of the film was optimal at around 1000℃. The effects of different RTA conditions on charge storage were characterized by capacitance--voltage measurement. Experimental results show that nc-Si:H films obtained by RTA have good charge storage characteristics for nonvolatile memory.
中图分类号: (Elemental semiconductors)