中国物理B ›› 2007, Vol. 16 ›› Issue (3): 795-798.doi: 10.1088/1009-1963/16/3/039

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Charge storage characteristics of hydrogenated nanocrystalline silicon film prepared by rapid thermal annealing

李志刚1, 龙世兵1, 刘明1, 王丛舜1, 贾锐1, 闾锦2, 施毅2   

  1. (1)Laboratory of Nanofabrication and Novel Device Integration,Institute of Microelectronics,Chinese Academy of Sciences, Beijing 100029, China; (2)National Laboratory of Solid State Microstructures, Department of Physics,Nanjing University, Nanjing 210093, China
  • 收稿日期:2006-05-08 修回日期:2006-09-28 出版日期:2007-03-20 发布日期:2007-03-20
  • 基金资助:
    Project supported by the National Basic Research Program of China (973 Program) (Grant No~2006CB302706) and the National Natural Science Foundation of China (Grant Nos~90607022, 90401002, 90207004, and 60506005).

Charge storage characteristics of hydrogenated nanocrystalline silicon film prepared by rapid thermal annealing

Li Zhi-Gang(李志刚)a), Long Shi-Bing(龙世兵)a), Liu Ming(刘明)a)†, Wang Cong-Shun(王丛舜)a), Jia Rui(贾锐)a), Lv Jin(闾锦)b), and Shi Yi(施毅)b)   

  1. a Laboratory of Nanofabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China; b National Laboratory of Solid State Microstructures, Department of Physics, Nanjing University, Nanjing 210093, China
  • Received:2006-05-08 Revised:2006-09-28 Online:2007-03-20 Published:2007-03-20
  • Supported by:
    Project supported by the National Basic Research Program of China (973 Program) (Grant No~2006CB302706) and the National Natural Science Foundation of China (Grant Nos~90607022, 90401002, 90207004, and 60506005).

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摘要： The early stages of hydrogenated nanocrystalline silicon (nc-Si:H) films deposited by plasma-enhanced chemical vapour deposition were characterized by atomic force microscopy. To increase the density of nanocrystals in the nc-Si:H films, the films were annealed by rapid thermal annealing (RTA) at different temperatures and then analysed by Raman spectroscopy. It was found that the recrystallization process of the film was optimal at around 1000℃. The effects of different RTA conditions on charge storage were characterized by capacitance--voltage measurement. Experimental results show that nc-Si:H films obtained by RTA have good charge storage characteristics for nonvolatile memory.

关键词: nc-Si, hydrogenated nanocrystalline silicon, charge storage, rapid thermal annealing

Abstract: The early stages of hydrogenated nanocrystalline silicon (nc-Si:H) films deposited by plasma-enhanced chemical vapour deposition were characterized by atomic force microscopy. To increase the density of nanocrystals in the nc-Si:H films, the films were annealed by rapid thermal annealing (RTA) at different temperatures and then analysed by Raman spectroscopy. It was found that the recrystallization process of the film was optimal at around 1000℃. The effects of different RTA conditions on charge storage were characterized by capacitance--voltage measurement. Experimental results show that nc-Si:H films obtained by RTA have good charge storage characteristics for nonvolatile memory.

Key words: nc-Si, hydrogenated nanocrystalline silicon, charge storage, rapid thermal annealing

中图分类号:  (Elemental semiconductors)

  • 73.61.Cw
68.37.Ps (Atomic force microscopy (AFM)) 78.30.Am (Elemental semiconductors and insulators) 81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)) 81.40.Ef (Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization)