Fabrication of a 256-bits organic memory by soft x-ray lithography

doi:10.1088/1674-1056/19/5/057204

中国物理B ›› 2010, Vol. 19 ›› Issue (5): 57204-057204.doi: 10.1088/1674-1056/19/5/057204

Fabrication of a 256-bits organic memory by soft x-ray lithography

鲁闻生¹, 刘兴华², 姬濯宇², 涂德钰², 朱效立², 谢常青², 刘明²

(1)Key Laboratory of Colloid and Interface Science, Center of Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100080, China; (2)Microfabrication and Nanotechnology Lab, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

收稿日期:2009-05-13 修回日期:2009-11-13 出版日期:2010-05-15 发布日期:2010-05-15
基金资助:
Project supported by the State Key Development Program for Basic Research of China (Grant No.~2006CB806204), National Natural Science Foundation of China (Grant Nos.~60825403, 90607022, 60676001 and 60676008) and Synchrotron Radiation Fund of Innovation Project of Ministry of Education of China (Grant No.~20070156S).

Fabrication of a 256-bits organic memory by soft x-ray lithography

Liu Xing-Hua(刘兴华)^a), Lu Wen-Sheng(鲁闻生)^b), Ji Zhuo-Yu(姬濯宇)^a), Tu De-Yu(涂德钰)^a),Zhu Xiao-Li(朱效立)^a), Xie Chang-Qing(谢常青)^a), and Liu Ming(刘明)^a)^†

^a Microfabrication and Nanotechnology Lab, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China; ^b Key Laboratory of Colloid and Interface Science, Center of Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100080, China

Received:2009-05-13 Revised:2009-11-13 Online:2010-05-15 Published:2010-05-15
Supported by:
Project supported by the State Key Development Program for Basic Research of China (Grant No.~2006CB806204), National Natural Science Foundation of China (Grant Nos.~60825403, 90607022, 60676001 and 60676008) and Synchrotron Radiation Fund of Innovation Project of Ministry of Education of China (Grant No.~20070156S).

摘要/Abstract

摘要： This paper reports a procedure of soft x-ray lithography for the fabrication of organic crossbar structure. Electron beam lithography is employed to fabricate the mask for soft x-ray lithography, with direct writing technology to lithograph positive resist, polymethyl methacrylate on the polyimide film. Then Au is electroplated on the polyimide film. Hard contact mode exposure is used in x-ray lithography to transfer the graph from the mask to the wafer. The 256-bits organic memory is achieved with the critical dimension of 250~nm.

Abstract: This paper reports a procedure of soft x-ray lithography for the fabrication of organic crossbar structure. Electron beam lithography is employed to fabricate the mask for soft x-ray lithography, with direct writing technology to lithograph positive resist, polymethyl methacrylate on the polyimide film. Then Au is electroplated on the polyimide film. Hard contact mode exposure is used in x-ray lithography to transfer the graph from the mask to the wafer. The 256-bits organic memory is achieved with the critical dimension of 250 nm.

Key words: molecular memory, crossbar array, soft x-ray lithography, electron beam lithography

中图分类号: (Lithography, masks and pattern transfer)

85.40.Hp

82.45.Qr (Electrodeposition and electrodissolution) 82.45.Fk (Electrodes) 79.60.Dp (Adsorbed layers and thin films)

刘兴华, 鲁闻生, 姬濯宇, 涂德钰, 朱效立, 谢常青, 刘明. Fabrication of a 256-bits organic memory by soft x-ray lithography[J]. 中国物理B, 2010, 19(5): 57204-057204.

Liu Xing-Hua(刘兴华), Lu Wen-Sheng(鲁闻生), Ji Zhuo-Yu(姬濯宇), Tu De-Yu(涂德钰),Zhu Xiao-Li(朱效立), Xie Chang-Qing(谢常青), and Liu Ming(刘明). Fabrication of a 256-bits organic memory by soft x-ray lithography[J]. Chin. Phys. B, 2010, 19(5): 57204-057204.

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Fabrication of a 256-bits organic memory by soft x-ray lithography

Fabrication of a 256-bits organic memory by soft x-ray lithography

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