中国物理B ›› 2008, Vol. 17 ›› Issue (4): 1394-1399.doi: 10.1088/1674-1056/17/4/040

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Effects of deposition pressure and plasma power on the growth and properties of boron-doped microcrystalline silicon films

汪建华1, 杨仕娥2, 卢景霄2, 郜小勇2, 谷景华2, 郑文2, 赵尚丽2, 陈永生3   

  1. (1)Depart of Materials Science and Engineering, Wuhan Institute of Technology, Wuhan 430073, China; (2)Key Laboratory of Material Physics, Department of Physics, Zhengzhou University, Zhengzhou 450052, China; (3)Key Laboratory of Material Physics, Department of Physics, Zhengzhou University, Zhengzhou 450052, China；Institute of Plasma Physics, Chinese Academy of Sciences, Hefei 230031, China
  • 收稿日期:2007-10-17 修回日期:2007-11-21 出版日期:2008-04-20 发布日期:2008-04-20
  • 基金资助:
    Project supported by the State Key Development Program for Basic Research of China (Grant No 2006CB202601), and Basic Research Project of Henan province, China (Grant No 072300410140).

Effects of deposition pressure and plasma power on the growth and properties of boron-doped microcrystalline silicon films

Chen Yong-Sheng (陈永生)a)b)†, Yang Shi-E(杨仕娥)a), Wang Jian-Hua(汪建华)c), Lu Jing-Xiao(卢景霄)a), Gao Xiao-Yong(郜小勇)a), Gu Jin-Hua(谷景华)a), Zheng Wen(郑文)a), and Zhao Shang-Li(赵尚丽)a)   

  1. a Key Laboratory of Material Physics, Department of Physics, Zhengzhou University, Zhengzhou 450052, China; b Institute of Plasma Physics, Chinese Academy of Sciences, Hefei 230031, China; c Depart of Materials Science and Engineering, Wuhan Institute of Technology, Wuhan 430073, China
  • Received:2007-10-17 Revised:2007-11-21 Online:2008-04-20 Published:2008-04-20
  • Supported by:
    Project supported by the State Key Development Program for Basic Research of China (Grant No 2006CB202601), and Basic Research Project of Henan province, China (Grant No 072300410140).

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摘要： Using diborane as doping gas, p-doped $\mu $c-Si:H layers are deposited by using the plasma enhanced chemical vapour deposition (PECVD) technology. The effects of deposition pressure and plasma power on the growth and the properties of $\mu $c-Si:H layers are investigated. The results show that the deposition rate, the electrical and the structural properties are all strongly dependent on deposition pressure and plasma power. Boron-doped $\mu $c-Si:H films with a dark conductivity as high as 1.42\,$\Omega ^{ - 1}\cdot$cm$^{ - 1}$ and a crystallinity of above 50{\%} are obtained. With this p-layer, $\mu $c-Si:H solar cells are fabricated. In addition, the mechanism for the effects of deposition pressure and plasma power on the growth and the properties of boron-doped $\mu $c-Si:H layers is discussed.

关键词: boron-doped $\mu $c-Si:H films, thin film solar cells, Raman crystallinity, dark conductivity

Abstract: Using diborane as doping gas, p-doped $\mu $c-Si:H layers are deposited by using the plasma enhanced chemical vapour deposition (PECVD) technology. The effects of deposition pressure and plasma power on the growth and the properties of $\mu $c-Si:H layers are investigated. The results show that the deposition rate, the electrical and the structural properties are all strongly dependent on deposition pressure and plasma power. Boron-doped $\mu $c-Si:H films with a dark conductivity as high as 1.42 $\Omega ^{ - 1}\cdot$cm$^{ - 1}$ and a crystallinity of above 50% are obtained. With this p-layer, $\mu $c-Si:H solar cells are fabricated. In addition, the mechanism for the effects of deposition pressure and plasma power on the growth and the properties of boron-doped $\mu $c-Si:H layers is discussed.

Key words: boron-doped $\mu $c-Si:H films, thin film solar cells, Raman crystallinity, dark conductivity

中图分类号:  (Nucleation and growth)

  • 68.55.A-
68.55.Ln (Defects and impurities: doping, implantation, distribution, concentration, etc.) 73.50.Pz (Photoconduction and photovoltaic effects) 73.61.Cw (Elemental semiconductors) 78.30.Am (Elemental semiconductors and insulators) 81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))