中国物理B ›› 2003, Vol. 12 ›› Issue (1): 97-99.doi: 10.1088/1009-1963/12/1/318
孔云川1, 周大勇1, 澜 清1, 刘金龙2, 苗振华3, 封松林4, 牛智川5
Kong Yun-Chuan (孔云川), Zhou Da-Yong (周大勇), Lan Qing (澜 清), Liu Jin-Long (刘金龙), Miao Zhen-Hua (苗振华), Feng Song-Lin (封松林), Niu Zhi-Chuan (牛智川)
摘要: 1.3 um emitting InAs/GaAs quantum dots (QDs) have been grown by molecular beam epitaxy and QD light emitting diodes (LEDs) have been fabricated. In the electroluminescence spectra of QD LEDs, two clear peaks corresponding to the ground state emission and the excited state emission are observed. It was found that the ground state emission could be achieved by increasing the number of QDs contained in the active region because of the state filling effect. This work demonstrates a way to control and tune the emitting wavelength of QD LEDs and lasers.
中图分类号: (Quantum dots)