A method to obtain ground state electroluminescence from 1.3μm emitting InAs/GaAs quantum dots grown by molecular beam epitaxy
孔云川, 周大勇, 澜 清, 刘金龙, 苗振华, 封松林, 牛智川
A method to obtain ground state electroluminescence from 1.3μm emitting InAs/GaAs quantum dots grown by molecular beam epitaxy
Kong Yun-Chuan (孔云川), Zhou Da-Yong (周大勇), Lan Qing (澜 清), Liu Jin-Long (刘金龙), Miao Zhen-Hua (苗振华), Feng Song-Lin (封松林), Niu Zhi-Chuan (牛智川)
中国物理B
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2003, (1): 97
-99
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DOI: 10.1088/1009-1963/12/1/318