Electric-field-dependent charge delocalization from dopant atoms in silicon junctionless nanowire transistor

doi:10.1088/1674-1056/25/10/108102

中国物理B ›› 2016, Vol. 25 ›› Issue (10): 108102-108102.doi: 10.1088/1674-1056/25/10/108102

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Electric-field-dependent charge delocalization from dopant atoms in silicon junctionless nanowire transistor

Hao Wang(王昊), Wei-Hua Han(韩伟华), Xiao-Song Zhao(赵晓松), Wang Zhang(张望), Qi-Feng Lyu(吕奇峰), Liu-Hong Ma(马刘红), Fu-Hua Yang(杨富华)

1 Engineering Research Center for Semiconductor Integration Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
2 State Key Laboratory for Superlattices and Microstructures, Beijing 100083, China

收稿日期:2016-03-31 修回日期:2016-05-31 出版日期:2016-10-05 发布日期:2016-10-05
通讯作者: Wei-Hua Han, Fu-Hua Yang E-mail:weihua@semi.ac.cn;fhyang@semi.ac.cn
基金资助:
Project supported partly by the National Key R & D Program of China (Grant No. 2016YFA02005003) and the National Natural Science Foundation of China (Grant Nos. 61376096 and 61327813).

Electric-field-dependent charge delocalization from dopant atoms in silicon junctionless nanowire transistor

Hao Wang(王昊)¹, Wei-Hua Han(韩伟华)¹, Xiao-Song Zhao(赵晓松)¹, Wang Zhang(张望)¹, Qi-Feng Lyu(吕奇峰)¹, Liu-Hong Ma(马刘红)^1,2, Fu-Hua Yang(杨富华)^1,2

1 Engineering Research Center for Semiconductor Integration Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
2 State Key Laboratory for Superlattices and Microstructures, Beijing 100083, China

Received:2016-03-31 Revised:2016-05-31 Online:2016-10-05 Published:2016-10-05
Contact: Wei-Hua Han, Fu-Hua Yang E-mail:weihua@semi.ac.cn;fhyang@semi.ac.cn
Supported by:
Project supported partly by the National Key R & D Program of China (Grant No. 2016YFA02005003) and the National Natural Science Foundation of China (Grant Nos. 61376096 and 61327813).

摘要/Abstract

摘要：

We study electric-field-dependent charge delocalization from dopant atoms in a silicon junctionless nanowire transistor by low-temperature electron transport measurement. The Arrhenius plot of the temperature-dependent conductance demonstrates the transport behaviors of variable-range hopping (below 30 K) and nearest-neighbor hopping (above 30 K). The activation energy for the charge delocalization gradually decreases due to the confinement potential of the conduction channel decreasing from the threshold voltage to the flatband voltage. With the increase of the source-drain bias, the activation energy increases in a temperature range from 30 K to 100 K at a fixed gate voltage, but decreases above the temperature of 100 K.

关键词: quantum dots, electric field, junctionless nanowire transistor, current oscillations

Abstract:

Key words: quantum dots, electric field, junctionless nanowire transistor, current oscillations

中图分类号: (Quantum dots)

81.07.Ta

94.20.Ss (Electric fields; current system) 81.07.Gf (Nanowires) 85.30.Tv (Field effect devices)

王昊, 韩伟华, 赵晓松, 张望, 吕奇峰, 马刘红, 杨富华. Electric-field-dependent charge delocalization from dopant atoms in silicon junctionless nanowire transistor[J]. 中国物理B, 2016, 25(10): 108102-108102.

Hao Wang(王昊), Wei-Hua Han(韩伟华), Xiao-Song Zhao(赵晓松), Wang Zhang(张望), Qi-Feng Lyu(吕奇峰), Liu-Hong Ma(马刘红), Fu-Hua Yang(杨富华). Electric-field-dependent charge delocalization from dopant atoms in silicon junctionless nanowire transistor[J]. Chin. Phys. B, 2016, 25(10): 108102-108102.

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Electric-field-dependent charge delocalization from dopant atoms in silicon junctionless nanowire transistor

Electric-field-dependent charge delocalization from dopant atoms in silicon junctionless nanowire transistor

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